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THS4120CDGNRG4

Texas Instruments

THS4120CDGNRG4 by Texas Instruments

THS4120CDGNRG4 by Texas Instruments is an Operational Amplifier with 9000uV Max Input Offset Voltage, 96dB Nominal CMRR, and 3.3V Supply Voltage. Ideal for applications requiring high precision amplification in commercial temperature range.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,259 parts In-Stock

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2,259

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Digiode

USA . 984 parts In-Stock

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984

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,216 parts In-Stock

1+ parts

$6.310

100+ parts

-

1k+ parts

$7.058

10k+ parts

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1,216

$6.310

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$7.058

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DigiPath Technology Company

USA . 1,267 parts In-Stock

1+ parts

$6.948

100+ parts

$6.392

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1,267

$6.948

$6.392

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IDEA Electronic Components Group

UK . 1,284 parts In-Stock

1+ parts

$7.090

100+ parts

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$6.381

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1,284

$7.090

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$6.381

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ChromeModa Solutions

Germany . 734 parts In-Stock

1+ parts

$7.090

100+ parts

$5.814

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734

$7.090

$5.814

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One Stop Electronics

USA . 548 parts In-Stock

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$7.410

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548

$7.410

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AZTECH Wire

Italy . 741 parts In-Stock

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$14.784

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741

$14.784

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Corphita

USA . 1,661 parts In-Stock

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Microchip USA

USA . 171 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the THS4120CDGNRG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality operational amplifiers that are essential for a wide range of applications. From precision instrumentation to audio amplification, this product offers customers exceptional value and benefits. Trust in the superior design and craftsmanship of Texas Instruments to elevate your projects to new heights of success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for a wide range of applications.

Maximum Input Offset Voltage: 9000 uV

The low maximum input offset voltage helps in minimizing error in signal processing and ensures accurate output.

Maximum Average Bias Current (IIB): 0.0000012 uA

The low bias current ensures minimal power consumption and helps maintain stability in the circuit.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Nominal Common Mode Reject Ratio: 96 dB

The high common mode rejection ratio ensures that common mode noise is effectively rejected, leading to clean and accurate signal output.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V is common and easily obtainable, making it convenient for various applications.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature allows the operational amplifier to function reliably in a wide range of environmental conditions.

Technology: CMOS

The CMOS technology provides low power consumption and high noise immunity, making the operational amplifier energy-efficient and reliable.

Technical Specifications

Operational Amplifiers (Op Amps) THS4120CDGNRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3.3 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Common Mode Rejection Ratio (CMRR ):

96 dB

Input Offset Voltage Limit:

9000 uV

Nominal Slew Rate:

55 V/us

Peak Bias Current:

1.2 pA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

3.6 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

11 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.042 in (1.07 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

THS4120CDGNRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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