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THS4012IDR

Texas Instruments

THS4012IDR by Texas Instruments

THS4012IDR by Texas Instruments is a dual operational amplifier with 110 dB CMRR and 70000 kHz unity gain bandwidth. It operates at -40 to 85 °C, with 8 uA bias current and 8000 uV input offset voltage. Ideal for industrial applications requiring high precision amplification in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,742 parts In-Stock

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5,742

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Digiode

USA . 2,263 parts In-Stock

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2,263

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Distributors (Availability)

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One Stop Electronics

USA . 1,440 parts In-Stock

1+ parts

$3.410

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1,440

$3.410

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Parana Technologies

USA . 1,235 parts In-Stock

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$4.434

100+ parts

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$4.860

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1,235

$4.434

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$4.860

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DigiPath Technology Company

USA . 1,462 parts In-Stock

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$4.882

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1,462

$4.882

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IDEA Electronic Components Group

UK . 2,065 parts In-Stock

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$4.982

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$4.484

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2,065

$4.982

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$4.484

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ChromeModa Solutions

Germany . 1,050 parts In-Stock

1+ parts

$4.982

100+ parts

$4.085

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1,050

$4.982

$4.085

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AZTECH Wire

Italy . 417 parts In-Stock

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$6.437

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417

$6.437

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Component Stockers USA

USA . 734 parts In-Stock

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$99.990

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734

$99.990

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Corphita

USA . 2,049 parts In-Stock

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2,049

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Microchip USA

USA . 216 parts In-Stock

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Overview

Unlock unparalleled precision and performance with the THS4012IDR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers reliable operational amplifiers that are perfect for a wide range of applications. From industrial automation to medical devices, this dual-function amplifier offers exceptional value with its high-quality construction and advanced technology. Experience the benefits of enhanced signal fidelity and improved efficiency with the THS4012IDR, setting new standards for operational amplifiers in the market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the internal components of the operational amplifier, ensuring durability and reliability.

Maximum Input Offset Voltage: 8000 uV

Low input offset voltage helps in minimizing errors in signal processing, making this operational amplifier suitable for precision applications.

Maximum Average Bias Current (IIB): 8 uA

Low bias current ensures minimal input loading, which is important for accurate signal amplification and processing.

Surface Mount: YES

Surface mount capability allows for easy and compact integration into electronic circuit boards, saving space and facilitating mass production.

Nominal Common Mode Reject Ratio: 110 dB

High common mode rejection ratio indicates the operational amplifier's ability to reject common mode signals, leading to clean and accurate output signals.

Maximum Supply Voltage Limit: 16.5 V

Wide supply voltage range allows for flexibility in powering the operational amplifier, making it suitable for various voltage requirements.

Nominal Unity Gain Bandwidth: 70000 kHz

High unity gain bandwidth indicates the operational amplifier's capability to operate at high frequencies, making it suitable for fast signal processing applications.

Technology: BIPOLAR

Bipolar technology offers high accuracy and low noise performance, making this operational amplifier a reliable choice for sensitive applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed as an operational amplifier, this product excels in signal amplification and processing tasks.

Technical Specifications

Operational Amplifiers (Op Amps) THS4012IDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

9/32/±4.5/±16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

70 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

110 dB

Input Offset Voltage Limit:

8000 uV

Minimum Voltage Gain:

5000

Nominal Slew Rate:

310 V/us

Peak Bias Current:

8 uA

Maximum Bias Current (IIB) @25 °C:

6 uA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

16.5 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-16.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

11 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

THS4012IDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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