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THS4012CDG4

Texas Instruments

THS4012CDG4 by Texas Instruments

THS4012CDG4 by Texas Instruments is a dual operational amplifier with 8uA max bias current, 8000uV max input offset voltage, and 110dB nominal CMRR. Ideal for applications requiring high precision amplification in commercial temperature range. Package: Small Outline, Technology: Bipolar, Wideband with 290kHz unity gain bandwidth.

Median Price

$9.430

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 73 parts In-Stock

1+ parts

$9.430

100+ parts

$7.050

1k+ parts

$6.130

10k+ parts

$4.950

73

$9.430

$7.050

$6.130

$4.950

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,246 parts In-Stock

1+ parts

$8.958

100+ parts

-

1k+ parts

-

10k+ parts

-

2,246

$8.958

-

-

-

Vyrian

USA . 9,594 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,594

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,212 parts In-Stock

1+ parts

$1.557

100+ parts

-

1k+ parts

$2.203

10k+ parts

-

1,212

$1.557

-

$2.203

-

DigiPath Technology Company

USA . 1,550 parts In-Stock

1+ parts

$1.714

100+ parts

$1.577

1k+ parts

-

10k+ parts

-

1,550

$1.714

$1.577

-

-

ChromeModa Solutions

Germany . 3,005 parts In-Stock

1+ parts

$1.749

100+ parts

$1.434

1k+ parts

-

10k+ parts

-

3,005

$1.749

$1.434

-

-

IDEA Electronic Components Group

UK . 920 parts In-Stock

1+ parts

$1.749

100+ parts

-

1k+ parts

$1.574

10k+ parts

-

920

$1.749

-

$1.574

-

Corphita

USA . 3,193 parts In-Stock

1+ parts

$8.487

100+ parts

-

1k+ parts

-

10k+ parts

-

3,193

$8.487

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Microchip USA

USA . 4,081 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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4,081

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QUARKTWIN TECHNOLOGY LTD

USA . 2,260 parts In-Stock

1+ parts

-

100+ parts

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2,260

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Overview

Elevate your circuit designs with the THS4012CDG4 by Texas Instruments, a top-tier manufacturer known for delivering high-quality operational amplifiers. Ideal for a wide range of applications, this product offers unparalleled performance and reliability. With advanced features like a wideband architecture and voltage-feedback design, customers can expect exceptional value and precision in their projects. Upgrade your systems today with the THS4012CDG4 and experience the benefits of superior technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 8000 uV

High input offset voltage ensures accurate signal processing and minimal errors in the output.

Surface Mount: YES

Surface mount option allows for easy installation and compact design for space-constrained applications.

Nominal Common Mode Reject Ratio: 110 dB

High common mode rejection ratio helps in rejecting noise and interference for a cleaner output signal.

Maximum Operating Temperature: 70 °C

Wide operating temperature range makes it suitable for various environmental conditions.

Nominal Unity Gain Bandwidth: 290000 kHz

High unity gain bandwidth allows for high-speed signal processing and amplification.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise performance for critical applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed as an operational amplifier for various signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) THS4012CDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

9/32/±4.5/±16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

290 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

110 dB

Minimum Common Mode Rejection Ratio (CMRR ):

82 dB

Input Offset Voltage Limit:

8000 uV

Minimum Voltage Gain:

5000

Minimum Slew Rate:

300 V/us

Nominal Slew Rate:

310 V/us

Maximum Input Offset Current (IIO):

250 nA

Peak Bias Current:

8 uA

Maximum Bias Current (IIB) @25 °C:

6 uA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

16.5 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-16.5 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

19 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

THS4012CDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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