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THS3111CDG4

Texas Instruments

THS3111CDG4 by Texas Instruments

THS3111CDG4 by Texas Instruments is an Operational Amplifier with 12000uV Max Input Offset Voltage, 100MHz Nominal Bandwidth, and 58dB Common Mode Reject Ratio. Ideal for applications requiring high-speed signal processing in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,164 parts In-Stock

1+ parts

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9,164

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Digiode

USA . 1,341 parts In-Stock

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1,341

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Distributors (Availability)

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Parana Technologies

USA . 1,390 parts In-Stock

1+ parts

$4.975

100+ parts

-

1k+ parts

$5.520

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1,390

$4.975

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$5.520

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DigiPath Technology Company

USA . 1,455 parts In-Stock

1+ parts

$5.478

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1,455

$5.478

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ChromeModa Solutions

Germany . 635 parts In-Stock

1+ parts

$5.590

100+ parts

$4.584

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635

$5.590

$4.584

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IDEA Electronic Components Group

UK . 83 parts In-Stock

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$5.590

100+ parts

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$5.031

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83

$5.590

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$5.031

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One Stop Electronics

USA . 1,225 parts In-Stock

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$6.410

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1,225

$6.410

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AZTECH Wire

Italy . 206 parts In-Stock

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$12.620

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206

$12.620

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Corphita

USA . 3,675 parts In-Stock

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Microchip USA

USA . 1,404 parts In-Stock

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Overview

Elevate your electronics projects with the THS3111CDG4 by Texas Instruments, a top-tier operational amplifier that stands out for its unmatched quality and reliability. Designed by the prestigious manufacturer, this op amp offers a wide range of applications in various industries. With a nominal bandwidth of 100 MHz and a unity gain bandwidth of 80,000 kHz, this amplifier delivers exceptional performance that exceeds expectations. Trust in Texas Instruments to provide the cutting-edge technology you need for your next project, and experience the value and benefits that the THS3111CDG4 brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides protection for the internal components of the operational amplifier, making it a reliable choice for long-term use.

Maximum Input Offset Voltage: 12000 uV

This low input offset voltage ensures accurate and precise output signal representation, making the operational amplifier suitable for applications requiring high precision.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V allows for compatibility with a wide range of electronic systems and simplifies integration into existing circuits.

Nominal Unity Gain Bandwidth: 80000 kHz

The high unity gain bandwidth ensures that the operational amplifier can handle high frequency signals with minimal distortion, making it ideal for audio and high-speed data applications.

Architecture: CURRENT-FEEDBACK

The current-feedback architecture provides improved bandwidth and stability compared to voltage-feedback amplifiers, making this operational amplifier suitable for applications requiring high speed and precision.

Nominal Bandwidth (3dB): 100 MHz

The wide bandwidth allows the operational amplifier to accurately amplify signals up to 100 MHz, making it suitable for a variety of high-frequency applications such as telecommunications and instrumentation.

Technical Specifications

Operational Amplifiers (Op Amps) THS3111CDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Current Feedback

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

100 MHz

Nominal Unity Gain Bandwidth:

80 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

58 dB

Minimum Common Mode Rejection Ratio (CMRR ):

62 dB

Input Offset Voltage Limit:

12000 uV

Nominal Slew Rate:

700 V/us

Maximum Input Offset Current (IIO):

15 uA

Peak Bias Current:

4 uA

Maximum Bias Current (IIB) @25 °C:

4 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

16.5 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-16.5 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

6.5 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug

Trade Compliance

THS3111CDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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