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THS3062DGNG4

Texas Instruments

THS3062DGNG4 by Texas Instruments

THS3062DGNG4 by Texas Instruments is a dual operational amplifier with 210 MHz bandwidth, 72 dB CMRR, and 300 kHz unity gain bandwidth. Ideal for industrial applications requiring high-speed signal processing in a compact package. Operates b/w -40 to 85°C with low bias current of 25 uA.

Median Price

$12.640

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12 parts In-Stock

1+ parts

-

100+ parts

$12.640

1k+ parts

$11.310

10k+ parts

$10.650

12

-

$12.640

$11.310

$10.650

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,184 parts In-Stock

1+ parts

$11.058

100+ parts

-

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4,184

$11.058

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Vyrian

USA . 7,282 parts In-Stock

1+ parts

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7,282

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 484 parts In-Stock

1+ parts

$1.371

100+ parts

-

1k+ parts

$2.091

10k+ parts

-

484

$1.371

-

$2.091

-

DigiPath Technology Company

USA . 720 parts In-Stock

1+ parts

$1.509

100+ parts

$1.388

1k+ parts

-

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-

720

$1.509

$1.388

-

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IDEA Electronic Components Group

UK . 1,442 parts In-Stock

1+ parts

$1.540

100+ parts

-

1k+ parts

$1.386

10k+ parts

-

1,442

$1.540

-

$1.386

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ChromeModa Solutions

Germany . 31 parts In-Stock

1+ parts

$1.540

100+ parts

$1.263

1k+ parts

-

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31

$1.540

$1.263

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Ampacity Inc.

Singapore . 12 parts In-Stock

1+ parts

$9.890

100+ parts

-

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12

$9.890

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Semicontronic

India . 12 parts In-Stock

1+ parts

$9.890

100+ parts

$9.643

1k+ parts

$9.593

10k+ parts

-

12

$9.890

$9.643

$9.593

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Corphita

USA . 874 parts In-Stock

1+ parts

$10.476

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874

$10.476

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Corohmni

South Africa . 65 parts In-Stock

1+ parts

$11.250

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65

$11.250

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AZTECH Wire

Italy . 601 parts In-Stock

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$19.645

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601

$19.645

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Continental Prestige Electronics

USA . 4,799 parts In-Stock

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Microchip USA

USA . 2,533 parts In-Stock

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Argo Parts USA

USA . 67 parts In-Stock

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67

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Bastille Electronics

Australia . 40 parts In-Stock

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40

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Perfect Parts

USA . 20 parts In-Stock

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20

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Overview

Unlock precision and reliability with the THS3062DGNG4 by Texas Instruments, a top-tier manufacturer known for cutting-edge technology. As part of the Operational Amplifiers category, this product boasts a wide range of applications, delivering superior performance in various industries. With its advanced features and high-quality construction, this amplifier ensures optimal functionality and efficiency. Trust Texas Instruments to provide unparalleled value and innovation, making the THS3062DGNG4 the ultimate choice for your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material makes the product lightweight and durable, making it suitable for a variety of applications.

Maximum Input Offset Voltage: 3500 uV

The low input offset voltage ensures minimal errors in signal processing, making the product accurate and reliable.

Maximum Average Bias Current (IIB): 25 uA

Low bias current helps in reducing power consumption and ensures stable operation over extended periods of time.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Nominal Common Mode Reject Ratio: 72 dB

High common mode rejection ratio helps in reducing noise and interference, resulting in clean and accurate signal processing.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V makes it compatible with a wide range of power sources, ensuring versatility in usage.

Nominal Unity Gain Bandwidth: 300000 kHz

The high unity gain bandwidth allows for fast signal processing and wide frequency response, making the product suitable for high-speed applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, the product provides high gain and precise signal amplification, making it ideal for various signal processing tasks.

Technical Specifications

Operational Amplifiers (Op Amps) THS3062DGNG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Current Feedback

Technology:

BIPOLAR

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

210 MHz

Nominal Unity Gain Bandwidth:

300 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

72 dB

Minimum Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

3500 uV

Nominal Slew Rate:

7000 V/us

Peak Bias Current:

25 uA

Maximum Bias Current (IIB) @25 °C:

25 uA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

16.5 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-16.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

20 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Trade Compliance

THS3062DGNG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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