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SN75240PE4

Texas Instruments

SN75240PE4 by Texas Instruments

SN75240PE4 by Texas Instruments is a Trans Voltage Suppressor Diode with 2 elements, offering a max power dissipation of 1.15W and a breakdown voltage range of 6.5V to 8V. It is designed for transient suppression applications in electronic circuits requiring protection against voltage spikes and surges.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,298 parts In-Stock

1+ parts

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6,298

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Digiode

USA . 1,474 parts In-Stock

1+ parts

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1,474

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 489 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

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489

$0.010

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Parana Technologies

USA . 1,227 parts In-Stock

1+ parts

$0.066

100+ parts

-

1k+ parts

$1.439

10k+ parts

-

1,227

$0.066

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$1.439

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DigiPath Technology Company

USA . 717 parts In-Stock

1+ parts

$0.073

100+ parts

$0.067

1k+ parts

-

10k+ parts

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717

$0.073

$0.067

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ChromeModa Solutions

Germany . 4,150 parts In-Stock

1+ parts

$0.074

100+ parts

$0.061

1k+ parts

-

10k+ parts

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4,150

$0.074

$0.061

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IDEA Electronic Components Group

UK . 1,749 parts In-Stock

1+ parts

$0.074

100+ parts

-

1k+ parts

$0.067

10k+ parts

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1,749

$0.074

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$0.067

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Semicontronic

India . 1,159 parts In-Stock

1+ parts

$2.010

100+ parts

$1.960

1k+ parts

$1.950

10k+ parts

-

1,159

$2.010

$1.960

$1.950

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One Stop Electronics

USA . 1,220 parts In-Stock

1+ parts

$3.010

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1,220

$3.010

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AZTECH Wire

Italy . 339 parts In-Stock

1+ parts

$8.025

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339

$8.025

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Corphita

USA . 2,005 parts In-Stock

1+ parts

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2,005

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Corohmni

South Africa . 136 parts In-Stock

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136

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Overview

Enhance the reliability of your electronic devices with the SN75240PE4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and performance in their Transient Suppression Devices. This product offers superior protection against voltage spikes and surges, safeguarding your equipment from potential damage. Whether you're in the automotive, industrial, or consumer electronics sector, the SN75240PE4 provides peace of mind and long-term durability. Trust Texas Instruments to deliver cutting-edge solutions for your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection for the internal components, making the product suitable for demanding applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 60 W

With a high maximum non repetitive peak reverse power dissipation of 60 W, this product can effectively handle transient surges and protect connected equipment from damage.

Nominal Breakdown Voltage: 7 V

The nominal breakdown voltage of 7 V ensures reliable protection against overvoltage events, offering peace of mind for the user.

No. of Terminals: 8

Having 8 terminals allows for versatile connectivity options, making it easier to integrate the transient suppression device into different systems.

Maximum Power Dissipation: 1.15 W

The maximum power dissipation of 1.15 W indicates efficient energy handling capabilities, leading to effective transient suppression without overheating.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures fast and effective clamping of transient voltages, providing superior protection for connected equipment.

Maximum Repetitive Peak Reverse Voltage: 6 V

With a maximum repetitive peak reverse voltage of 6 V, this product can withstand repeated transient events without compromising performance.

Technical Specifications

Transient Suppression Devices SN75240PE4 attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

8 V

Minimum Breakdown Voltage:

6.5 V

Nominal Breakdown Voltage:

7 V

Config:

COMPLEX

Diode Element Material:

SILICON

JEDEC-95 Code:

MS-001BA

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Maximum Non Repetitive Peak Reverse Power Dissipation:

60 W

No. of Elements:

2

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

6 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Trade Compliance

SN75240PE4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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