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SN65LVDS9638DGNRG4

Texas Instruments

SN65LVDS9638DGNRG4 by Texas Instruments

SN65LVDS9638DGNRG4 by Texas Instruments is a Line Driver & Receiver with 3.6V max supply voltage, 2.5ns max transmit delay, and 85°C max operating temp. Ideal for EIA-644/TIA-644 interface standard applications requiring CMOS technology and complementary output polarity in industrial settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,555 parts In-Stock

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Digiode

USA . 4,337 parts In-Stock

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4,337

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Chip Stock

USA . 1,105 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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One Stop Electronics

USA . 1,120 parts In-Stock

1+ parts

$3.500

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$3.500

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Parana Technologies

USA . 1,062 parts In-Stock

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$8.193

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$8.803

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DigiPath Technology Company

USA . 1,332 parts In-Stock

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$9.022

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IDEA Electronic Components Group

UK . 1,302 parts In-Stock

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$9.206

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$8.746

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$8.285

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$8.285

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ChromeModa Solutions

Germany . 853 parts In-Stock

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$9.206

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$7.549

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853

$9.206

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AZTECH Wire

Italy . 846 parts In-Stock

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$10.533

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$10.533

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Ampacity Inc.

Singapore . 911 parts In-Stock

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$11.500

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911

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Continental Prestige Electronics

USA . 5,645 parts In-Stock

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Microchip USA

USA . 4,460 parts In-Stock

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Argo Parts USA

USA . 3,484 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Corphita

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Overview

Enhance your electronics projects with the SN65LVDS9638DGNRG4 from Texas Instruments. This high-quality Line Driver & Receiver offers superior performance and reliability, thanks to the trusted reputation of its manufacturer. Perfect for a wide range of applications, this product provides value by delivering fast transmission speeds and efficient power usage. Upgrade your designs today with the SN65LVDS9638DGNRG4 and experience the benefits of cutting-edge technology in a compact and reliable package.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Maximum Supply Voltage: 3.6 V

Provides a wide range of supply voltage, allowing flexibility in powering the line driver & receiver.

Maximum Transmit Delay: 2.5 ns

Low transmit delay ensures fast and efficient signal transmission, suitable for high-speed applications.

Operating Temperature: -40 to 85 °C

Wide operating temperature range makes the product suitable for use in various environments or industrial applications.

Differential Output: YES

Differential output helps in reducing noise and interference in signal transmission, ensuring reliable data communication.

Technical Specifications

Line Drivers & Receivers SN65LVDS9638DGNRG4 attributes and parameters. Explore more Line Drivers & Receivers devices from Texas Instruments

Specs

Differential Output:

YES

Driver No. of Bits:

2

Maximum High Level Input Current:

.00002 Amp

Input Characteristics:

STANDARD

Interface IC Type:

Interface Standard:

EIA-644; TIA-644

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Minimum Out Swing:

.247 V

Output Characteristics:

3-STATE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Receive Delay:

0 ns

Maximum Seated Height:

1.07 mm

Sub-Category:

Line Driver or Receivers

Maximum Supply Current:

35 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

3.6 V

Minimum Supply Voltage-1:

3 V

Nominal Supply Voltage-1:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Transmit Delay:

2.5 ns

Width:

3 mm

Trade Compliance

SN65LVDS9638DGNRG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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