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SN10501DRG4

Texas Instruments

SN10501DRG4 by Texas Instruments

SN10501DRG4 by Texas Instruments is a video amplifier IC with 8 terminals, operating at -40 to 85°C. It has a bandwidth of 100 kHz, power supplies of ±5V, and max supply current of 22mA. Ideal for audio/video applications requiring small outline package style and industrial temperature grade.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,680 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,680

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-

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Digiode

USA . 1,698 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,698

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,235 parts In-Stock

1+ parts

$3.404

100+ parts

-

1k+ parts

$3.930

10k+ parts

-

2,235

$3.404

-

$3.930

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DigiPath Technology Company

USA . 990 parts In-Stock

1+ parts

$3.748

100+ parts

$3.449

1k+ parts

-

10k+ parts

-

990

$3.748

$3.449

-

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ChromeModa Solutions

Germany . 2,165 parts In-Stock

1+ parts

$3.825

100+ parts

$3.136

1k+ parts

-

10k+ parts

-

2,165

$3.825

$3.136

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IDEA Electronic Components Group

UK . 1,844 parts In-Stock

1+ parts

$3.825

100+ parts

-

1k+ parts

$3.442

10k+ parts

-

1,844

$3.825

-

$3.442

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One Stop Electronics

USA . 216 parts In-Stock

1+ parts

$11.800

100+ parts

-

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10k+ parts

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216

$11.800

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AZTECH Wire

Italy . 895 parts In-Stock

1+ parts

$15.196

100+ parts

-

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895

$15.196

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Corphita

USA . 2,146 parts In-Stock

1+ parts

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2,146

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Overview

Enhance the audio and video experience with the Texas Instruments SN10501DRG4 Video Amplifier. Crafted with precision by a renowned manufacturer, this compact amplifier offers exceptional quality and performance for a variety of applications. Elevate your projects with its small outline package design, dual terminal position, and wide operating temperature range. With a nominal bandwidth of 100 kHz and low supply voltage requirements, this amplifier delivers unparalleled value, benefits, and advantages to customers seeking top-notch audio and video amplification solutions. Choose the SN10501DRG4 for superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the amplifier, ensuring a longer lifespan.

Power Supplies (V): +-5

Allows for a wide range of power supply voltages, making it versatile and compatible with different setups.

Maximum Operating Temperature: 85 °C

Can operate at high temperatures without overheating, ensuring reliable performance in various environments.

Nominal Bandwidth: 100 kHz

Provides a wide frequency range, allowing for clear and accurate amplification of audio and video signals.

Terminal Pitch: 1.27 mm

Compact terminal pitch allows for space-saving installation and integration in tight spaces or on crowded circuit boards.

Technical Specifications

Audio & Video Amplifiers SN10501DRG4 attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

Additional Features:

IT CAN ALSO OPERATE WITH 2.7V TO 18V SINGLE SUPPLY

Nominal Bandwidth:

100 kHz

General IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

+-5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Current:

22 mA

Maximum Supply Voltage (Vsup):

8 V

Minimum Supply Voltage (Vsup):

1.35 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

SN10501DRG4 General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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