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PTMAG5328A1DQDBVR

Texas Instruments

PTMAG5328A1DQDBVR by Texas Instruments

Texas Instruments' PTMAG5328A1DQDBVR is a magnetic field sensor with 6 terminals, operating voltage range of 1.65-5.5V, and hysteresis of 1mT. Ideal for applications requiring digital voltage output in the -40 to 125°C temperature range, such as proximity sensing and position detection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,347 parts In-Stock

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Digiode

USA . 1,412 parts In-Stock

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Parana Technologies

USA . 1,117 parts In-Stock

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$2.675

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$3.159

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$2.675

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DigiPath Technology Company

USA . 2,034 parts In-Stock

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$2.946

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ChromeModa Solutions

Germany . 3,886 parts In-Stock

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$3.006

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$2.465

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IDEA Electronic Components Group

UK . 1,279 parts In-Stock

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$3.006

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$2.705

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Semicontronic

India . 292 parts In-Stock

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$8.750

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$8.531

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$8.488

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292

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AZTECH Wire

Italy . 750 parts In-Stock

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$17.576

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750

$17.576

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Ampacity Inc.

Singapore . 1,583 parts In-Stock

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$27.750

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One Stop Electronics

USA . 373 parts In-Stock

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$32.750

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Corphita

USA . 3,243 parts In-Stock

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Corohmni

South Africa . 211 parts In-Stock

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Overview

Discover the innovative PTMAG5328A1DQDBVR magnetic field sensor by Texas Instruments, setting new standards in precision and reliability. Designed for a wide range of applications, this sensor offers unparalleled accuracy and performance, thanks to the superior quality of its manufacturer. From automotive to industrial automation, this sensor delivers precise measurements and dependable results, making it an essential tool for any project. Experience the value and benefits that this cutting-edge technology brings to your work, ensuring efficiency and success every step of the way. Elevate your projects with the PTMAG5328A1DQDBVR and unlock endless possibilities in sensor technology.

Feature Benefit Bullets

Maximum Supply Voltage: 5.5 V

Allows for a wide range of supply voltage, making it versatile and suitable for different applications.

Hysteresis: 1 mT

Low hysteresis ensures accurate and stable readings, improving the sensor's reliability.

Body Width: 1.6 inch

Compact size allows for easy integration into various devices or systems.

Sensors or Transducers Type: MAGNETIC FIELD SENSOR,HALL EFFECT

Utilizes Hall effect technology for precise and efficient magnetic field detection.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data processing and integration with digital systems.

Maximum Operating Temperature: 125 °C

High operating temperature range makes it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for reliable performance in harsh environments.

Technical Specifications

Magnetic Field Sensors PTMAG5328A1DQDBVR attributes and parameters. Explore more Magnetic Field Sensors devices from Texas Instruments

Specs

Body Width:

1.6 inch

Body Height:

1.1 mm

Body Length/Diameter:

2.9 mm

Housing:

PLASTIC

Hysteresis:

1 mT

Input Mode:

OMNIPOLAR

Maximum Magnetic Field Range:

16 mT

Minimum Range Of Magnetic Field:

.7 mT

Mounting Feature:

No. of Terminals:

6

Maximum Operating Current:

.0014 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

PUSH-PULL

Maximum Output Current:

5 A

Output Range:

Output Type:

Package Equivalence Code:

TSOP6,.11,37

Package Shape or Style:

Sensors or Transducers Type:

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

1.65 V

Termination Type:

SOLDER

Trade Compliance

PTMAG5328A1DQDBVR Sensors & Transducers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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