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PLPV812DGKT

Texas Instruments

PLPV812DGKT by Texas Instruments

The Texas Instruments PLPV812DGKT is an operational amplifier with 2 functions, offering a max input offset voltage of 300uV and nominal common mode reject ratio of 98dB. Ideal for automotive applications, it operates b/w -40 to 125°C with a supply voltage range of 1.8-6V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,143 parts In-Stock

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Digiode

USA . 251 parts In-Stock

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Parana Technologies

USA . 1,753 parts In-Stock

1+ parts

$4.596

100+ parts

-

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$5.058

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1,753

$4.596

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$5.058

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ChromeModa Solutions

Germany . 4,114 parts In-Stock

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$5.164

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$4.234

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$5.164

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IDEA Electronic Components Group

UK . 1,946 parts In-Stock

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$5.164

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$4.648

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$5.164

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$4.648

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One Stop Electronics

USA . 1,194 parts In-Stock

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$9.410

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$9.410

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AZTECH Wire

Italy . 804 parts In-Stock

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$11.465

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804

$11.465

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Corphita

USA . 4,869 parts In-Stock

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DigiPath Technology Company

USA . 1,463 parts In-Stock

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$4.656

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Microchip USA

USA . 413 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality PLPV812DGKT operational amplifier by Texas Instruments. Designed for a wide range of applications, this dual-function Op Amp offers precision performance and reliability. With a compact square package style and automotive-grade temperature grade, this amplifier is perfect for demanding environments. Experience the benefits of superior common mode reject ratio, fast unity gain bandwidth, and low input offset voltage. Trust in Texas Instruments to deliver exceptional value and innovative solutions for all your design needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection, making the product suitable for a wide range of applications.

Maximum Input Offset Voltage: 300 uV

Low input offset voltage ensures accuracy and precision in signal amplification, making it reliable for sensitive applications.

Surface Mount: YES

Surface mount capability enables easy integration onto PCBs, saving space and simplifying assembly processes.

Nominal Common Mode Reject Ratio: 98 dB

High common mode rejection ratio ensures efficient noise reduction, leading to clean signal output in noisy environments.

Nominal Supply Voltage / Vsup (V): 1.8

Low supply voltage requirement allows for energy-efficient operation, suitable for battery-powered devices.

Maximum Operating Temperature: 125 °C

Wide operating temperature range enables the product to function reliably in harsh environmental conditions.

Nominal Unity Gain Bandwidth: 8 kHz

High unity gain bandwidth indicates excellent frequency response, making the product ideal for high-speed applications.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, ensuring reliability and performance in automotive electronic systems.

Technical Specifications

Operational Amplifiers (Op Amps) PLPV812DGKT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

2

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

8 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

98 dB

Input Offset Voltage Limit:

300 uV

Nominal Slew Rate:

1800 V/us

Operational Characteristics

Nominal Supply Voltage:

1.8 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Trade Compliance

PLPV812DGKT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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