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OPA861IDBVRG4

Texas Instruments

OPA861IDBVRG4 by Texas Instruments

OPA861IDBVRG4 by Texas Instruments is an Operational Amplifier with 20000uV Max Input Offset Voltage, 6.6uA Max Average Bias Current, and 80000kHz Nominal Unity Gain Bandwidth. Widely used in industrial applications for its -40 to 85 °C operating temperature range and compact SMALL OUTLINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,607 parts In-Stock

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2,607

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Digiode

USA . 2,191 parts In-Stock

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2,191

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Distributors (Availability)

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Parana Technologies

USA . 2,084 parts In-Stock

1+ parts

$1.794

100+ parts

-

1k+ parts

$2.353

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2,084

$1.794

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$2.353

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DigiPath Technology Company

USA . 446 parts In-Stock

1+ parts

$1.976

100+ parts

$1.818

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446

$1.976

$1.818

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ChromeModa Solutions

Germany . 4,714 parts In-Stock

1+ parts

$2.016

100+ parts

$1.653

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4,714

$2.016

$1.653

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IDEA Electronic Components Group

UK . 299 parts In-Stock

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$2.016

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$1.814

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299

$2.016

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$1.814

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One Stop Electronics

USA . 1,074 parts In-Stock

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$7.410

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1,074

$7.410

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AZTECH Wire

Italy . 460 parts In-Stock

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$8.467

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460

$8.467

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Corphita

USA . 3,332 parts In-Stock

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3,332

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Perfect Parts

USA . 616 parts In-Stock

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616

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Microchip USA

USA . 327 parts In-Stock

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327

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Overview

Enhance your electronic designs with the OPA861IDBVRG4 operational amplifier by Texas Instruments, a top-quality manufacturer renowned for innovation and reliability. Ideal for a wide range of applications, this Op Amp offers exceptional performance and precision. With a compact design and low power consumption, it provides unmatched value and efficiency for your projects. Trust in Texas Instruments to deliver cutting-edge solutions that elevate your work to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability, making it suitable for various applications.

Maximum Input Offset Voltage: 20000 uV

Low input offset voltage helps in reducing errors in the output signal, making it ideal for precision applications.

Maximum Average Bias Current (IIB): 6.6 uA

Low average bias current helps in minimizing power consumption and improving overall efficiency.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying assembly process.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V makes it compatible with standard power sources, making it versatile for different applications.

Maximum Supply Voltage Limit: 6.5 V

The maximum supply voltage limit of 6.5V provides a safety buffer and ensures stable operation within specified limits.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, it can withstand harsh environmental conditions and extended usage.

Technology: BIPOLAR

The bipolar technology used in this operational amplifier offers high precision and low noise performance, making it suitable for critical applications.

Technical Specifications

Operational Amplifiers (Op Amps) OPA861IDBVRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

±5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

80 MHz

Input Offset Voltage Limit:

20000 uV

Nominal Slew Rate:

900 V/us

Peak Bias Current:

6.6 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6.5 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-6.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

7.4 mA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

6

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G6

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP6,.11,37

Trade Compliance

OPA861IDBVRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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