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OPA4743EA/250G4

Texas Instruments

OPA4743EA/250G4 by Texas Instruments

OPA4743EA/250G4 by Texas Instruments is a CMOS operational amplifier with 7000 kHz unity gain bandwidth, 84 dB common mode reject ratio, and 6.8 mA max supply current. Ideal for industrial applications requiring low-bias amplification in a compact thin profile package with surface mount capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,973 parts In-Stock

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Digiode

USA . 476 parts In-Stock

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One Stop Electronics

USA . 1,080 parts In-Stock

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$5.410

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Parana Technologies

USA . 15 parts In-Stock

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$5.794

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$6.583

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DigiPath Technology Company

USA . 257 parts In-Stock

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$6.380

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$5.869

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IDEA Electronic Components Group

UK . 957 parts In-Stock

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$5.859

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ChromeModa Solutions

Germany . 138 parts In-Stock

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$6.510

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$5.338

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AZTECH Wire

Italy . 405 parts In-Stock

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$18.069

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Component Stockers USA

USA . 332 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 2,897 parts In-Stock

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Microchip USA

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Corphita

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Metaverse IC Inc.

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Perfect Parts

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Overview

Elevate your electronic designs with the OPA4743EA/250G4 by Texas Instruments. Crafted with precision and expertise, this operational amplifier offers unparalleled performance and reliability in a compact package. Ideal for a wide range of applications, this Op Amp delivers exceptional value and benefits to customers seeking high-quality components. Trust in Texas Instruments to provide you with the cutting-edge technology you need to bring your projects to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the product lightweight and durable, ideal for a variety of applications.

Maximum Input Offset Voltage: 7000 uV

The low input offset voltage ensures accurate signal processing and minimal error in the output.

Maximum Average Bias Current (IIB): 0.00001 uA

The low bias current helps in maintaining stability and precision in the amplifier circuit.

Nominal Common Mode Reject Ratio: 84 dB

High common mode rejection ratio ensures that only the differential signal is amplified, reducing noise interference.

Nominal Unity Gain Bandwidth: 7000 kHz

The high unity gain bandwidth allows for high-frequency operation, making it suitable for a wide range of applications.

Technology: CMOS

The CMOS technology offers low power consumption and high input impedance, making the op amp energy-efficient and versatile.

Technical Specifications

Operational Amplifiers (Op Amps) OPA4743EA/250G4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.75/±6/3.5/12 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

7 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

84 dB

Minimum Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

19950

Nominal Slew Rate:

10 V/us

Maximum Input Offset Current (IIO):

10 pA

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6.6 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-6.6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

6.8 mA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

OPA4743EA/250G4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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