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OPA452TA-1G3

Texas Instruments

OPA452TA-1G3 by Texas Instruments

OPA452TA-1G3 by Texas Instruments is an operational amplifier with a max input offset voltage of 3000 uV, 94 dB common mode reject ratio, and 1800 kHz unity gain bandwidth. Ideal for automotive applications, it operates at temperatures ranging from -40 to 125 °C and has low bias current of 0.0001 uA.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,276 parts In-Stock

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Vyrian

USA . 2,946 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Ampacity Inc.

Singapore . 459 parts In-Stock

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$1.410

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459

$1.410

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Parana Technologies

USA . 496 parts In-Stock

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$2.677

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$3.161

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496

$2.677

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DigiPath Technology Company

USA . 1,400 parts In-Stock

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$2.948

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$2.948

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ChromeModa Solutions

Germany . 5,205 parts In-Stock

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$3.008

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$2.467

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$3.008

$2.467

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IDEA Electronic Components Group

UK . 247 parts In-Stock

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$3.008

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$2.707

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One Stop Electronics

USA . 481 parts In-Stock

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$6.410

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AZTECH Wire

Italy . 516 parts In-Stock

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$17.374

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Component Stockers USA

USA . 766 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 15,708 parts In-Stock

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Argo Parts USA

USA . 2,739 parts In-Stock

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Continental Prestige Electronics

USA . 2,335 parts In-Stock

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Corphita

USA . 2,104 parts In-Stock

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Microchip USA

USA . 392 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Discover the precision and reliability of the OPA452TA-1G3 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers exceptional quality operational amplifiers that are versatile and efficient. The OPA452TA-1G3 is perfect for a wide range of applications, providing customers with superior performance and accuracy. Experience the value and benefits of this product, from its low bias current to its high common mode rejection ratio. Trust Texas Instruments for all your operational amplifier needs and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Maximum Input Offset Voltage: 3000 uV

Ensures accurate signal processing with minimal error.

Maximum Average Bias Current (IIB): 0.0001 uA

Helps in maintaining stability and efficiency in the circuit.

Nominal Common Mode Reject Ratio: 94 dB

Ensures rejection of common mode signals for cleaner output.

Nominal Supply Voltage / Vsup (V): 40

Offers a suitable supply voltage for optimal performance.

Power Supplies (V): +-10/+-40

Allows flexibility in power supply options for different applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for various environments.

Minimum Voltage Gain: 63100

Provides high gain amplification for weak signals.

Nominal Unity Gain Bandwidth: 1800 kHz

Ensures high-frequency response for fast signal processing.

Maximum Supply Current: 6.5 mA

Efficient power consumption for longer battery life.

Technical Specifications

Operational Amplifiers (Op Amps) OPA452TA-1G3 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Power Supply:

±10/±40 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

Yes

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

94 dB

Minimum Common Mode Rejection Ratio (CMRR ):

86 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

63100

Nominal Slew Rate:

7.2 V/us

Peak Bias Current:

100 pA

Maximum Bias Current (IIB) @25 °C:

100 pA

Operational Characteristics

Nominal Supply Voltage:

40 V

Maximum Supply Voltage:

40 V

Maximum Negative Supply Voltage:

-40 V

Minimum Negative Supply Voltage:

-40 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

6.5 mA

Physical Characteristics

Length:

0.4 in (10.16 mm)

Width:

0.328 in (8.34 mm)

Maximum Seated Height:

0.185 in (4.7 mm)

Total Terminals:

7

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Zig-Zag

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PZFM-T7

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tube

Package Code:

ZFM

Package Shape:

Package Style:

Flange Mount

Package Equivalence Code:

ZIP7,.15,.2TB

Trade Compliance

OPA452TA-1G3 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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