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OPA4350TDC1

Texas Instruments

OPA4350TDC1 by Texas Instruments

OPA4350TDC1 by Texas Instruments is a CMOS operational amplifier with 18 terminals. It features a max input offset voltage of 500 uV, 84 dB nominal common mode reject ratio, and 38000 kHz unity gain bandwidth. Ideal for applications requiring high precision and low power consumption in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,969 parts In-Stock

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1,969

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Digiode

USA . 1,220 parts In-Stock

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1,220

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Distributors (Availability)

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One Stop Electronics

USA . 695 parts In-Stock

1+ parts

$3.410

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695

$3.410

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Parana Technologies

USA . 773 parts In-Stock

1+ parts

$4.959

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-

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$5.500

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773

$4.959

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$5.500

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DigiPath Technology Company

USA . 2,263 parts In-Stock

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$5.461

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2,263

$5.461

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ChromeModa Solutions

Germany . 2,863 parts In-Stock

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$5.572

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$4.569

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2,863

$5.572

$4.569

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IDEA Electronic Components Group

UK . 1,760 parts In-Stock

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$5.572

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$5.015

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1,760

$5.572

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$5.015

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AZTECH Wire

Italy . 367 parts In-Stock

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$15.874

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367

$15.874

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Microchip USA

USA . 1,598 parts In-Stock

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$43.330

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$42.710

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$42.400

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$42.090

1,598

$43.330

$42.710

$42.400

$42.090

Corphita

USA . 1,169 parts In-Stock

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Overview

Get ready to experience top-notch quality and performance with the OPA4350TDC1 by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers Operational Amplifiers (Op Amps) that are known for their reliability and precision. With a maximum input offset voltage of 500 uV and a nominal unity gain bandwidth of 38000 kHz, this product offers unparalleled value to customers seeking high-performance solutions. From audio equipment to sensor interfaces, the OPA4350TDC1 is versatile and efficient, making it the perfect choice for all your amplification needs. Elevate your projects with this cutting-edge amplifier and see the difference for yourself!

Feature Benefit Bullets

Maximum Input Offset Voltage: 500 uV

This low offset voltage ensures accurate and precise signal amplification, making it a reliable choice for applications requiring high precision.

Maximum Average Bias Current (IIB): 0.00001 uA

The extremely low bias current minimizes the impact on signal integrity, making this operational amplifier suitable for low power and high impedance circuit designs.

Surface Mount: YES

The surface mount capability allows for easy integration onto circuit boards, saving space and facilitating efficient assembly processes.

Nominal Common Mode Reject Ratio: 84 dB

The high common mode rejection ratio ensures that the amplifier effectively rejects common-mode noise, resulting in clean and accurate signal amplification.

Nominal Unity Gain Bandwidth: 38000 kHz

With a high unity gain bandwidth, this operational amplifier is capable of handling high-frequency signals with minimal distortion, making it suitable for applications requiring wide bandwidth.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making this operational amplifier suitable for battery-powered devices and applications requiring high input impedance.

Technical Specifications

Operational Amplifiers (Op Amps) OPA4350TDC1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Total Functions:

4

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

38 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

84 dB

Minimum Common Mode Rejection Ratio (CMRR ):

66 dB

Input Offset Voltage Limit:

500 uV

Nominal Slew Rate:

22 V/us

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Maximum Supply Current:

30 mA

Physical Characteristics

Length:

0.126 in (3.1902 mm)

Width:

0.06 in (1.524 mm)

Total Terminals:

18

Terminal Position:

Upper

Terminal Form:

Surface Mount:

Yes

Standards

JESD-30 Code:

R-XUUC-N18

Packaging and Shipping

Package Code:

DIE

Package Shape:

Package Style:

Uncased Chip

Trade Compliance

OPA4350TDC1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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