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OPA4344PAG4

Texas Instruments

OPA4344PAG4 by Texas Instruments

OPA4344PAG4 by Texas Instruments is a CMOS Operational Amplifier with 4 functions, offering low bias current of 0.00001 uA and unity gain bandwidth of 1000 kHz. Ideal for industrial applications, it operates at temperatures ranging from -40 to 85 °C and features micropower technology for efficient performance.

Median Price

$3.843

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

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$3.843

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50

$3.843

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Vyrian

USA . 7,076 parts In-Stock

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Digiode

USA . 2,875 parts In-Stock

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2,875

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Distributors (Availability)

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One Stop Electronics

USA . 1,616 parts In-Stock

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$3.410

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$3.410

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Parana Technologies

USA . 208 parts In-Stock

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$6.557

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$7.299

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208

$6.557

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$7.299

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ChromeModa Solutions

Germany . 3,695 parts In-Stock

1+ parts

$7.367

100+ parts

$6.041

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3,695

$7.367

$6.041

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IDEA Electronic Components Group

UK . 800 parts In-Stock

1+ parts

$7.367

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$6.630

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800

$7.367

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$6.630

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AZTECH Wire

Italy . 447 parts In-Stock

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$7.654

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447

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Component Stockers USA

USA . 465 parts In-Stock

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$99.990

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$99.990

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Corphita

USA . 3,346 parts In-Stock

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DigiPath Technology Company

USA . 1,801 parts In-Stock

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$6.642

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Perfect Parts

USA . 560 parts In-Stock

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560

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Microchip USA

USA . 444 parts In-Stock

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444

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Overview

Enhance your electronic designs with the high-quality OPA4344PAG4 operational amplifier by Texas Instruments. With 4 functions in one compact package, this op amp offers superior performance and reliability. Perfect for a wide range of applications, from audio equipment to industrial automation, this versatile component provides unmatched precision and efficiency. Trust Texas Instruments for top-notch technology that delivers exceptional value and benefits to every customer. Experience innovation at its best with the OPA4344PAG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the operational amplifier, ensuring reliability and longevity.

Maximum Input Offset Voltage: 1200 uV

Low input offset voltage ensures minimal error in the output signal, making this operational amplifier suitable for precision applications.

Maximum Average Bias Current (IIB): 0.00001 uA

Low bias current results in minimal power consumption and improved stability in the operational amplifier circuit.

No. of Functions: 4

Having multiple functions integrated into one device reduces the overall component count in a circuit, saving space and simplifying design.

Nominal Common Mode Reject Ratio: 92 dB

High common mode rejection ratio ensures that the amplifier can effectively reject common-mode noise, resulting in a cleaner output signal.

Nominal Supply Voltage / Vsup (V): 5.5

The nominal supply voltage of 5.5V makes this operational amplifier suitable for a wide range of applications requiring medium power.

Power Supplies (V): 3/5

Supports dual power supplies of 3V and 5V, providing flexibility in various circuit configurations and applications.

No. of Terminals: 14

Having multiple terminals allows for easy connectivity in a circuit, enabling versatile usage and integration.

Maximum Supply Voltage Limit: 7.5 V

With a maximum supply voltage limit of 7.5V, this operational amplifier can operate reliably under varying voltage conditions.

Maximum Operating Temperature: 85 °C

Operates efficiently at high temperatures of up to 85°C, making it suitable for industrial applications requiring robust performance.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations in the amplifier circuit, improving overall performance and reliability.

Nominal Unity Gain Bandwidth: 1000 kHz

High unity gain bandwidth allows for fast response and high-frequency operation, making this operational amplifier ideal for signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) OPA4344PAG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

92 dB

Input Offset Voltage Limit:

1200 uV

Minimum Voltage Gain:

31600

Nominal Slew Rate:

0.8 V/us

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

5.5 V

Maximum Supply Voltage:

7.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

1.2 mA

Physical Characteristics

Length:

0.76 in (19.305 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

OPA4344PAG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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