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OPA376AIDCKTG4

Texas Instruments

OPA376AIDCKTG4 by Texas Instruments

OPA376AIDCKTG4 by Texas Instruments is a CMOS Operational Amplifier with low-offset and low-bias features. It offers a max input offset voltage of 25 uV, nominal unity gain bandwidth of 5500 kHz, and operates in automotive temperature grade applications. The package is small outline, thin profile, with shrink pitch terminals for surface mount assembly.

Median Price

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4

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1k+

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Chip Stock

USA . 41,510 parts In-Stock

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Vyrian

USA . 2,808 parts In-Stock

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Digiode

USA . 2,446 parts In-Stock

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Nova Conductors

Japan . 94 parts In-Stock

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Ampacity Inc.

Singapore . 147 parts In-Stock

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$0.410

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One Stop Electronics

USA . 992 parts In-Stock

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$1.410

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992

$1.410

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$2.471

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$2.347

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$2.471

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Parana Technologies

USA . 1,827 parts In-Stock

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$2.495

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$2.985

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ChromeModa Solutions

Germany . 5,802 parts In-Stock

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$2.803

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$2.298

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$2.803

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IDEA Electronic Components Group

UK . 2,187 parts In-Stock

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$2.803

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$2.523

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Semicontronic

India . 1,173 parts In-Stock

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$3.410

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$3.325

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$3.308

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Corohmni

South Africa . 1,071 parts In-Stock

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AZTECH Wire

Italy . 750 parts In-Stock

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Argo Parts USA

USA . 3,900 parts In-Stock

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Corphita

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Microchip USA

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DigiPath Technology Company

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Bastille Electronics

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Overview

Enhance your electronic designs with the OPA376AIDCKTG4 by Texas Instruments, a top-tier manufacturer known for producing high-quality operational amplifiers. This versatile component is perfect for a wide range of applications, offering precision and reliability that exceed expectations. With its low offset voltage and bias current, along with a compact design ideal for surface mounting, this op amp delivers exceptional performance in automotive and industrial settings. Elevate your projects with the unmatched value and benefits that the OPA376AIDCKTG4 brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used in electronic components due to its durability and cost-effectiveness.

Maximum Input Offset Voltage: 25 uV

Low input offset voltage ensures accurate and precise signal processing.

Maximum Average Bias Current (IIB): 0.00001 uA

Low bias current results in minimal power consumption and decreased signal distortion.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and improving manufacturing efficiency.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio helps in reducing noise interference and maintaining signal integrity.

Nominal Supply Voltage / Vsup (V): 2.2

Operates at a low supply voltage, making it suitable for low-power applications.

Power Supplies (V): 2.5/5

Compatible with multiple power supply voltages, offering versatility in different applications.

No. of Terminals: 5

Simple and straightforward terminal configuration for ease of use and installation.

Maximum Input Offset Current (IIO): 0.00001 uA

Low input offset current contributes to improved accuracy and stability in signal processing.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact package design with a small footprint, ideal for space-constrained applications.

Maximum Supply Voltage Limit: 7 V

Can operate within a wide range of supply voltages, offering flexibility in various operating conditions.

Maximum Operating Temperature: 125 °C

High temperature tolerance allows for reliable performance in harsh environmental conditions.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations in the amplifier circuit.

Minimum Voltage Gain: 1000000

High voltage gain enables amplification of weak signals without distortion.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for usage in both extreme cold and hot environments.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

High-quality terminal finish for improved conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and layout.

Low-Offset: YES

Low offset voltage contributes to accurate signal processing and minimal error.

Maximum Seated Height: 1.1 mm

Low seated height allows for compact and slim designs in electronic systems.

Width: 1.25 mm

Narrow width makes it suitable for applications where space is limited.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable soldering during assembly processes.

Length: 2 mm

Short length enables placement in tight spaces and compact electronic devices.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards for temperature performance and reliability.

Low-Bias: YES

Low bias current consumption helps in reducing power dissipation and extending battery life.

Nominal Unity Gain Bandwidth: 5500 kHz

High unity gain bandwidth for fast signal processing and response times.

Minimum Common Mode Reject Ratio: 76 dB

Decent common mode rejection ratio to effectively filter out common mode noise.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Terminal Form: GULL WING

Gull wing terminal form for easy surface mounting and reliable solder connections.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifier design for precision signal processing and amplification applications.

Maximum Supply Current: 0.95 mA

Low supply current consumption for energy-efficient operation.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture for stable and accurate amplification of voltage signals.

Packing Method: TR

Tape and reel packing method for convenient and automated assembly processes.

Nominal Slow Rate: 2 V/us

Slow slew rate for gradual signal amplification without introducing distortions.

Terminal Pitch: 0.65 mm

Close terminal pitch for high-density mounting and space-saving PCB layouts.

Moisture Sensitivity Level (MSL): 2

MSL 2 rating indicates that the component is suitable for standard moisture exposure levels in handling and storage.

Technical Specifications

Operational Amplifiers (Op Amps) OPA376AIDCKTG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.5/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Minimum Common Mode Rejection Ratio (CMRR ):

76 dB

Input Offset Voltage Limit:

25 uV

Minimum Voltage Gain:

1000000

Nominal Slew Rate:

2 V/us

Maximum Input Offset Current (IIO):

10 pA

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

2.2 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

950 μA

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.049 in (1.25 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP5/6,.08

Trade Compliance

OPA376AIDCKTG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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