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OPA349NA/3KG4

Texas Instruments

OPA349NA/3KG4 by Texas Instruments

OPA349NA/3KG4 by Texas Instruments is a micropower operational amplifier with low bias current, offering a nominal unity gain bandwidth of 70 kHz. It operates at temperatures ranging from 0 to 70 °C and has a max supply voltage limit of 5.5 V. This CMOS technology-based op amp is ideal for applications requiring low power consumption and high precision in compact designs.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 152,773 parts In-Stock

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Vyrian

USA . 6,582 parts In-Stock

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Digiode

USA . 489 parts In-Stock

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489

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Parana Technologies

USA . 702 parts In-Stock

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$5.789

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$6.579

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702

$5.789

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DigiPath Technology Company

USA . 755 parts In-Stock

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$6.374

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$5.864

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755

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ChromeModa Solutions

Germany . 1,194 parts In-Stock

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$6.504

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$5.333

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IDEA Electronic Components Group

UK . 1,113 parts In-Stock

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$6.504

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$5.854

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AZTECH Wire

Italy . 852 parts In-Stock

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$6.688

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One Stop Electronics

USA . 1,636 parts In-Stock

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$8.410

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A-Z Elektronik GmbH

Germany . 6,559 parts In-Stock

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Corphita

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Microchip USA

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Kepictronics

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Overview

Elevate your circuit designs with the OPA349NA/3KG4 by Texas Instruments, a high-quality operational amplifier that delivers precision and reliability. Manufactured by a trusted industry leader, this op amp is perfect for a wide range of applications, offering exceptional performance and efficiency. With low bias current and micropower capabilities, this compact device provides value and versatility for all your electronic projects. Experience superior functionality and stability with the OPA349NA/3KG4, the ideal choice for demanding engineering tasks.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 13000 uV

Low input offset voltage ensures accurate output signal amplification without distortion.

Maximum Average Bias Current (IIB): 0.00001 uA

Low bias current helps in reducing power consumption and interference in the output signal.

Surface Mount: YES

Surface mount package allows for easy and compact integration on PCBs.

Nominal Common Mode Reject Ratio: 72 dB

High common mode reject ratio ensures effective rejection of noise and interference in the input signal.

Nominal Supply Voltage / Vsup (V): 5

Compatible with a standard 5V power supply, making it suitable for a wide range of applications.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making the operational amplifier efficient and versatile.

Maximum Supply Current: 0.002 mA

Low supply current helps in minimizing power consumption and heat generation in the circuit.

Technical Specifications

Operational Amplifiers (Op Amps) OPA349NA/3KG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

70 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

72 dB

Minimum Common Mode Rejection Ratio (CMRR ):

48 dB

Input Offset Voltage Limit:

13000 uV

Minimum Voltage Gain:

1000

Nominal Slew Rate:

0.02 V/us

Maximum Input Offset Current (IIO):

10 pA

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

2 μA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

OPA349NA/3KG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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