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OPA345NA/3KG4

Texas Instruments

OPA345NA/3KG4 by Texas Instruments

OPA345NA/3KG4 by Texas Instruments is a CMOS Operational Amplifier with low bias current (0.00001 uA), high common mode rejection (92 dB), and micropower design. Ideal for industrial applications, it operates at temperatures ranging from -40 to 85 °C, with a unity gain bandwidth of 3000 kHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 9,650 parts In-Stock

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Vyrian

USA . 5,767 parts In-Stock

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Digiode

USA . 1,217 parts In-Stock

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One Stop Electronics

USA . 541 parts In-Stock

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$3.410

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541

$3.410

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Parana Technologies

USA . 184 parts In-Stock

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$5.431

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$6.136

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184

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DigiPath Technology Company

USA . 143 parts In-Stock

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$5.980

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$5.502

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ChromeModa Solutions

Germany . 4,382 parts In-Stock

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$6.102

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$5.004

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$6.102

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IDEA Electronic Components Group

UK . 1,091 parts In-Stock

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$6.102

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$5.492

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AZTECH Wire

Italy . 874 parts In-Stock

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$9.684

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Component Stockers USA

USA . 453 parts In-Stock

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$99.990

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453

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Kepictronics

USA . 5,050 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,050 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,796 parts In-Stock

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Corphita

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Microchip USA

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Overview

Discover the exceptional performance and reliability of the OPA345NA/3KG4 by Texas Instruments, a leading manufacturer in the industry. This operational amplifier is perfect for a wide range of applications due to its high-quality design and advanced technology. From industrial automation to consumer electronics, this versatile Op Amp offers unparalleled precision and efficiency. Experience superior functionality and peace of mind with the OPA345NA/3KG4, delivering value and innovation to meet all your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 1200 uV

Low input offset voltage ensures accurate signal processing and minimal error in the output.

Nominal Supply Voltage / Vsup (V): 5.5

Suitable for a wide range of applications with a stable and optimal supply voltage.

Surface Mount: YES

Allows for easy installation and mounting on circuit boards, saving space and simplifying the manufacturing process.

Nominal Unity Gain Bandwidth: 3000 kHz

High unity gain bandwidth enables the op amp to handle high-frequency signals accurately and efficiently.

Low-Bias: YES

Low bias current ensures minimal power consumption and thermal effects, leading to improved performance and stability.

Technical Specifications

Operational Amplifiers (Op Amps) OPA345NA/3KG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

YES (AVCL>=5)

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

92 dB

Input Offset Voltage Limit:

1200 uV

Minimum Voltage Gain:

31600

Nominal Slew Rate:

2 V/us

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

5.5 V

Maximum Supply Voltage:

7.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

OPA345NA/3KG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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