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OPA335AIDBVRG4

Texas Instruments

OPA335AIDBVRG4 by Texas Instruments

OPA335AIDBVRG4 by Texas Instruments is a low-offset operational amplifier with a max input offset voltage of 5 uV. It has a nominal common mode reject ratio of 130 dB and operates at a max supply voltage of 7 V. This amplifier is suitable for automotive applications due to its temperature grade and low-bias characteristics.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 31,150 parts In-Stock

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Vyrian

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Digiode

USA . 1,207 parts In-Stock

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Nova Conductors

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$1.510

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$1.434

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$1.434

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$1.510

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$1.434

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Parana Technologies

USA . 911 parts In-Stock

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$3.509

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$4.035

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911

$3.509

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$4.035

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ChromeModa Solutions

Germany . 3,730 parts In-Stock

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$3.943

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$3.233

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IDEA Electronic Components Group

UK . 631 parts In-Stock

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$3.943

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$3.549

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631

$3.943

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AZTECH Wire

Italy . 672 parts In-Stock

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$5.549

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Corohmni

South Africa . 108 parts In-Stock

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$5.596

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Ampacity Inc.

Singapore . 457 parts In-Stock

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Semicontronic

India . 758 parts In-Stock

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$7.225

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One Stop Electronics

USA . 414 parts In-Stock

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$7.410

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A-Z Elektronik GmbH

Germany . 9,223 parts In-Stock

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Continental Prestige Electronics

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Microchip USA

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Corphita

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Perfect Parts

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GreenTree Electronics

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DigiPath Technology Company

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Bastille Electronics

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Overview

Discover the OPA335AIDBVRG4, an exceptional operational amplifier by Texas Instruments. With its cutting-edge technology and superior quality, this amplifier offers unmatched performance in various applications. Whether you're designing automotive systems or industrial equipment, the OPA335AIDBVRG4 delivers precise and reliable results. Its low offset voltage and bias current ensure accurate measurements, while its compact size and surface mount capability make it incredibly versatile. Trust Texas Instruments for top-notch products that guarantee optimal functionality and value. Upgrade your projects with the OPA335AIDBVRG4 and experience the benefits of true excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage.

Maximum Input Offset Voltage: 5 uV

Low input offset voltage ensures high accuracy in signal processing, making it suitable for precision applications.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Nominal Common Mode Reject Ratio: 130 dB

High common mode rejection ratio helps in minimizing noise and interference for cleaner output signals.

Technology: CMOS

CMOS technology enables low power consumption and high efficiency operation, making the product energy-efficient.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is versatile and can be used in a wide range of applications such as amplification, filtering, and signal conditioning.

Technical Specifications

Operational Amplifiers (Op Amps) OPA335AIDBVRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Chooper Stab

Technology:

CMOS

Power Supply:

±1.35/±2.75/2.7/5.5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

130 dB

Minimum Common Mode Rejection Ratio (CMRR ):

110 dB

Input Offset Voltage Limit:

5 uV

Minimum Voltage Gain:

316000

Nominal Slew Rate:

1.6 V/us

Maximum Input Offset Current (IIO):

400 pA

Peak Bias Current:

200 pA

Maximum Bias Current (IIB) @25 °C:

200 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

350 μA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

OPA335AIDBVRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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