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OPA2726AIDGSRG4

Texas Instruments

OPA2726AIDGSRG4 by Texas Instruments

OPA2726AIDGSRG4 by Texas Instruments is a CMOS operational amplifier with 2 functions, featuring a max input offset voltage of 5000 uV and nominal common mode reject ratio of 94 dB. Ideal for automotive applications, it operates at temperatures ranging from -40 to 125 °C and has a unity gain bandwidth of 20 MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,514 parts In-Stock

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Digiode

USA . 3,061 parts In-Stock

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3,061

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Distributors (Availability)

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One Stop Electronics

USA . 1,272 parts In-Stock

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$2.410

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$2.410

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Parana Technologies

USA . 540 parts In-Stock

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$5.722

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$6.515

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540

$5.722

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$6.515

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IDEA Electronic Components Group

UK . 2,365 parts In-Stock

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$6.429

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$5.786

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$6.429

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ChromeModa Solutions

Germany . 968 parts In-Stock

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$6.429

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$5.272

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968

$6.429

$5.272

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AZTECH Wire

Italy . 480 parts In-Stock

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$15.565

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480

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Corphita

USA . 4,311 parts In-Stock

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DigiPath Technology Company

USA . 1,667 parts In-Stock

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$5.796

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Microchip USA

USA . 361 parts In-Stock

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Overview

Unleash the power of precision and performance with the OPA2726AIDGSRG4 by Texas Instruments. Crafted by one of the leading manufacturers in the industry, this operational amplifier offers unparalleled quality and reliability. Ideal for a wide range of applications, this product provides customers with exceptional value, superior benefits, and undeniable advantages. Experience enhanced functionality and efficiency with the OPA2726AIDGSRG4, setting new standards in operational amplifier technology. Elevate your projects to new heights with this cutting-edge solution from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that can withstand various environmental conditions.

Maximum Input Offset Voltage: 5000 uV

Low offset voltage for accurate signal processing.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Nominal Common Mode Reject Ratio: 94 dB

High rejection of common mode signals, leading to better signal integrity.

Nominal Supply Voltage / Vsup (V): 6

Suitable voltage for a variety of applications.

No. of Terminals: 10

Provides flexibility in connecting various components.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments.

Technology: CMOS

Low power consumption and high noise immunity.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying signals accurately and efficiently.

Maximum Supply Current: 12 mA

Adequate current supply for reliable operation.

Technical Specifications

Operational Amplifiers (Op Amps) OPA2726AIDGSRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2/±6/4/12 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

20 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

94 dB

Input Offset Voltage Limit:

5000 uV

Minimum Voltage Gain:

63100

Nominal Slew Rate:

30 V/us

Peak Bias Current:

200 pA

Maximum Bias Current (IIB) @25 °C:

200 pA

Operational Characteristics

Nominal Supply Voltage:

6 V

Maximum Supply Voltage:

6.6 V

Maximum Negative Supply Voltage:

-6 V

Minimum Negative Supply Voltage:

-6.6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

12 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

10

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G10

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP10,.19,20

Trade Compliance

OPA2726AIDGSRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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