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OPA251PAG4

Texas Instruments

OPA251PAG4 by Texas Instruments

OPA251PAG4 by Texas Instruments is an Operational Amplifier with a max input offset voltage of 300uV, common mode reject ratio of 124dB, and unity gain bandwidth of 35kHz. Ideal for industrial applications requiring low-offset amplification in a compact package style with micropower technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,891 parts In-Stock

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Digiode

USA . 3,609 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 75 parts In-Stock

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Parana Technologies

USA . 2,331 parts In-Stock

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$6.033

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$6.809

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$6.033

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$6.809

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AZTECH Wire

Italy . 598 parts In-Stock

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$6.450

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598

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ChromeModa Solutions

Germany . 3,487 parts In-Stock

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$6.779

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$5.559

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3,487

$6.779

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IDEA Electronic Components Group

UK . 558 parts In-Stock

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$6.779

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$6.101

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558

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$6.101

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One Stop Electronics

USA . 996 parts In-Stock

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$8.410

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996

$8.410

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Corphita

USA . 3,772 parts In-Stock

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DigiPath Technology Company

USA . 838 parts In-Stock

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$6.112

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Microchip USA

USA . 397 parts In-Stock

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Perfect Parts

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Overview

Experience top-notch performance and reliability with the Texas Instruments OPA251PAG4 operational amplifier. Crafted with precision and expertise, this Op Amp is designed to deliver exceptional results in a wide range of applications. From industrial settings to consumer electronics, the OPA251PAG4 offers unparalleled quality and efficiency. Trust in Texas Instruments' reputation for excellence and elevate your projects with this innovative component. Unlock endless possibilities and maximize your potential with the OPA251PAG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier, making it suitable for a variety of environments.

Maximum Input Offset Voltage: 300 uV

The low input offset voltage ensures accurate and precise signal processing, making this operational amplifier ideal for high-precision applications.

Nominal Common Mode Reject Ratio: 124 dB

With a high common mode rejection ratio, this operational amplifier can effectively eliminate noise and interference from the input signal, resulting in cleaner output.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V provides sufficient power for optimal performance of the operational amplifier in various circuit configurations.

Frequency Compensation: YES

The frequency compensation feature ensures stability and prevents oscillations in the operational amplifier, making it reliable for continuous operation.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is designed to provide amplification and signal processing functions, making it versatile for a wide range of applications in electronics.

Technology: BIPOLAR

The bipolar technology used in this operational amplifier offers low noise, high accuracy, and good temperature stability, making it suitable for precision applications.

Technical Specifications

Operational Amplifiers (Op Amps) OPA251PAG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.35/±18/2.7/36 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

Yes

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

35 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

124 dB

Input Offset Voltage Limit:

300 uV

Minimum Voltage Gain:

100000

Nominal Slew Rate:

0.01 V/us

Peak Bias Current:

-25 nA

Maximum Bias Current (IIB) @25 °C:

20 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

45 μA

Physical Characteristics

Length:

0.378 in (9.59 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

OPA251PAG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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