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OPA2364IDRG4

Texas Instruments

OPA2364IDRG4 by Texas Instruments

OPA2364IDRG4 by Texas Instruments is a dual operational amplifier with low-offset and low-bias features. It operates at a max supply voltage of 5.5V, has a nominal unity gain bandwidth of 7MHz, and offers micropower consumption. Ideal for automotive applications due to its temperature grade and small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,167 parts In-Stock

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Digiode

USA . 564 parts In-Stock

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One Stop Electronics

USA . 1,511 parts In-Stock

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$0.410

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$0.410

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Parana Technologies

USA . 1,449 parts In-Stock

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$4.634

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$5.108

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DigiPath Technology Company

USA . 1,884 parts In-Stock

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$5.103

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$4.695

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ChromeModa Solutions

Germany . 1,493 parts In-Stock

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$5.207

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$4.270

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IDEA Electronic Components Group

UK . 330 parts In-Stock

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$5.207

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$4.686

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330

$5.207

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$4.686

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AZTECH Wire

Italy . 875 parts In-Stock

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$16.444

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Perfect Parts

USA . 11,200 parts In-Stock

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Corphita

USA . 2,557 parts In-Stock

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Microchip USA

USA . 1,988 parts In-Stock

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Overview

Enhance your electronic designs with the OPA2364IDRG4 operational amplifier by Texas Instruments, known for its superior quality and reliability in the industry. This versatile component is ideal for a wide range of applications thanks to its low bias current, micropower capabilities, and low offset. Perfect for automotive use, this amplifier offers high performance with minimal power consumption, ensuring efficiency and precision in your projects. Trust Texas Instruments for excellence, trust the OPA2364IDRG4 for unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and reliability, making this op amp suitable for various applications where robustness is required.

Maximum Input Offset Voltage: 900 uV

Low input offset voltage ensures high precision in signal processing and minimizes errors in the output signal.

Maximum Average Bias Current (IIB): 0.00001 uA

Low bias current helps in reducing power consumption and improves the accuracy of the output signal.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and facilitating automated assembly processes.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio ensures effective suppression of interference and noise in the input signal, leading to a cleaner output signal.

Nominal Supply Voltage / Vsup (V): 3.6

Designed to operate within a nominal supply voltage range of 3.6V, making it suitable for low-power applications.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for reliable performance in harsh environmental conditions, such as automotive applications.

Nominal Unity Gain Bandwidth: 7000 kHz

High unity gain bandwidth allows for fast response and high-speed amplification of signals in various applications.

Technical Specifications

Operational Amplifiers (Op Amps) OPA2364IDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

7 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Minimum Common Mode Rejection Ratio (CMRR ):

74 dB

Input Offset Voltage Limit:

900 uV

Minimum Voltage Gain:

19950

Nominal Slew Rate:

5 V/us

Maximum Input Offset Current (IIO):

10 pA

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

3.6 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

1.5 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

OPA2364IDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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