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OPA2356AQDGKRQ1

Texas Instruments

OPA2356AQDGKRQ1 by Texas Instruments

OPA2356AQDGKRQ1 by Texas Instruments is a CMOS Operational Amplifier with low bias and wideband capabilities. It operates at temperatures ranging from -40 to 125 °C, making it suitable for automotive applications. With a max supply current of 14 mA and voltage gain of 10,000, this Op Amp is ideal for precision signal processing in automotive electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,061 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,061

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-

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Digiode

USA . 376 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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376

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,094 parts In-Stock

1+ parts

$1.480

100+ parts

-

1k+ parts

$2.157

10k+ parts

-

1,094

$1.480

-

$2.157

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DigiPath Technology Company

USA . 775 parts In-Stock

1+ parts

$1.630

100+ parts

-

1k+ parts

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10k+ parts

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775

$1.630

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ChromeModa Solutions

Germany . 5,442 parts In-Stock

1+ parts

$1.663

100+ parts

$1.364

1k+ parts

-

10k+ parts

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5,442

$1.663

$1.364

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IDEA Electronic Components Group

UK . 227 parts In-Stock

1+ parts

$1.663

100+ parts

-

1k+ parts

$1.497

10k+ parts

-

227

$1.663

-

$1.497

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One Stop Electronics

USA . 1,434 parts In-Stock

1+ parts

$9.410

100+ parts

-

1k+ parts

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10k+ parts

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1,434

$9.410

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-

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AZTECH Wire

Italy . 579 parts In-Stock

1+ parts

$10.222

100+ parts

-

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579

$10.222

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Corphita

USA . 3,250 parts In-Stock

1+ parts

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3,250

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Microchip USA

USA . 2,950 parts In-Stock

1+ parts

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100+ parts

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2,950

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Overview

Discover the OPA2356AQDGKRQ1 by Texas Instruments, a top-quality operational amplifier designed to meet the rigorous standards of the automotive industry. With a compact package and low-bias technology, this op amp offers reliable performance in a wide range of applications. From precision instrumentation to power management systems, the OPA2356AQDGKRQ1 delivers unmatched value and efficiency. Trust Texas Instruments for cutting-edge technology that drives innovation forward.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, making the product suitable for various applications.

Maximum Input Offset Voltage: 15000 uV

Low input offset voltage ensures accurate and precise operations in electronic circuits.

Surface Mount: YES

Allows for easy and efficient assembly onto circuit boards, saving time and effort in production.

Power Supplies (V): +-1.25/+-2.75/2.5/5.5

Supports a wide range of power supply voltages, providing versatility in different electronic systems.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, making it suitable for use in harsh environments or automotive applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, improving overall performance.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying signals accurately, making it ideal for use in various signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) OPA2356AQDGKRQ1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.25/±2.75/2.5/5.5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Input Offset Voltage Limit:

15000 uV

Minimum Voltage Gain:

10000

Maximum Bias Current (IIB) @25 °C:

50 pA

Operational Characteristics

Maximum Supply Voltage:

3.75 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

14 mA

Physical Characteristics

Total Terminals:

8

Terminal Pitch:

0.025 in (0.635 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

3

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

OPA2356AQDGKRQ1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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