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OPA2349UAG4

Texas Instruments

OPA2349UAG4 by Texas Instruments

OPA2349UAG4 by Texas Instruments is a CMOS operational amplifier with low-bias and micropower features. It offers a max input offset voltage of 13000 uV, nominal unity gain bandwidth of 70 kHz, and operates at temperatures ranging from -40 to 70 °C. Ideal for applications requiring low power consumption and precise signal amplification in compact electronic devices.

Median Price

$2.100

Lifecycle Status

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4

In-Stock Inventory

1k+

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Bristol Electronics

USA . 57 parts In-Stock

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$2.100

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$1.302

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Vyrian

USA . 4,845 parts In-Stock

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Digiode

USA . 957 parts In-Stock

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Microfarads

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Parana Technologies

USA . 995 parts In-Stock

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$1.185

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$1.987

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DigiPath Technology Company

USA . 118 parts In-Stock

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$1.305

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$1.201

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ChromeModa Solutions

Germany . 5,113 parts In-Stock

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$1.332

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$1.092

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IDEA Electronic Components Group

UK . 1,023 parts In-Stock

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$1.332

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$1.199

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One Stop Electronics

USA . 872 parts In-Stock

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AZTECH Wire

Italy . 205 parts In-Stock

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Corphita

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Microchip USA

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Perfect Parts

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Overview

Experience superior performance and reliability with the Texas Instruments OPA2349UAG4 Operational Amplifier. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge technology that meets the highest standards of quality. This Op Amp is ideal for a wide range of applications, offering customers unmatched value, precision, and efficiency. Trust in the OPA2349UAG4 to provide exceptional results for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, providing protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 13000 uV

Low input offset voltage ensures accurate and reliable signal processing.

Maximum Average Bias Current (IIB): 0.00001 uA

Low bias current helps in minimizing power consumption and improving overall efficiency.

Surface Mount: YES

Surface mount technology offers space-saving and efficient PCB assembly.

No. of Functions: 2

Having multiple functions allows for more versatile application and flexibility in circuit design.

Nominal Common Mode Reject Ratio: 72 dB

High common mode rejection ratio ensures better rejection of noise and interference in the input signal.

Nominal Supply Voltage / Vsup (V): 5

Suitable supply voltage for operation, providing stable power to the operational amplifier.

Power Supplies (V): 2/5

Support for dual power supplies allows for operation in various voltage configurations.

No. of Terminals: 8

Adequate number of terminals for connecting external components and interfaces.

Frequency Compensation: YES

Frequency compensation feature helps in maintaining stability and preventing oscillations in the amplifier circuit.

Technical Specifications

Operational Amplifiers (Op Amps) OPA2349UAG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

70 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

72 dB

Minimum Common Mode Rejection Ratio (CMRR ):

48 dB

Input Offset Voltage Limit:

13000 uV

Minimum Voltage Gain:

1000

Nominal Slew Rate:

0.02 V/us

Maximum Input Offset Current (IIO):

10 pA

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

4 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

OPA2349UAG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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