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OPA2344PAG4

Texas Instruments

OPA2344PAG4 by Texas Instruments

OPA2344PAG4 by Texas Instruments is a CMOS Operational Amplifier with 2 functions, offering low bias current of 0.00001 uA. It has a max input offset voltage of 1200 uV and nominal unity gain bandwidth of 1000 kHz. Ideal for industrial applications requiring micropower amplification in an 8-terminal package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,804 parts In-Stock

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Digiode

USA . 3,243 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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One Stop Electronics

USA . 302 parts In-Stock

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$0.410

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Parana Technologies

USA . 1,293 parts In-Stock

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$2.678

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$3.162

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ChromeModa Solutions

Germany . 4,954 parts In-Stock

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$3.009

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$2.467

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IDEA Electronic Components Group

UK . 720 parts In-Stock

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$3.009

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$2.708

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AZTECH Wire

Italy . 676 parts In-Stock

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$4.967

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Ampacity Inc.

Singapore . 247 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 1,812 parts In-Stock

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Perfect Parts

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Microchip USA

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Bastille Electronics

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Overview

Discover the unparalleled quality and reliability of the OPA2344PAG4 by Texas Instruments, a leading manufacturer in operational amplifiers. Designed for a wide range of applications, this op amp offers customers exceptional value with its low bias current, micropower capabilities, and high common mode rejection ratio. Whether you're working on industrial automation, automotive electronics, or medical equipment, trust in the OPA2344PAG4 to deliver superior performance and precision in your designs. Elevate your projects with the trusted technology and innovation of Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the operational amplifier, ensuring a longer lifespan.

Maximum Input Offset Voltage: 1200 uV

Low input offset voltage ensures accurate and stable amplification of signals.

Maximum Average Bias Current (IIB): 0.00001 uA

Low bias current results in minimal power consumption and reduced distortion in the output signal.

Nominal Common Mode Reject Ratio: 92 dB

High common-mode rejection ratio indicates effective suppression of noise and interference in the input signal.

Nominal Supply Voltage / Vsup (V): 5.5

Operates efficiently at a nominal supply voltage, making it suitable for a wide range of applications.

Maximum Operating Temperature: 85 °C

Withstands high operating temperatures, making it suitable for industrial environments.

Minimum Voltage Gain: 31600

Provides high voltage gain, ensuring accurate amplification of small input signals.

Nominal Unity Gain Bandwidth: 1000 kHz

Offers high unity gain bandwidth, allowing for precise amplification of signals across a wide frequency range.

Technical Specifications

Operational Amplifiers (Op Amps) OPA2344PAG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

92 dB

Input Offset Voltage Limit:

1200 uV

Minimum Voltage Gain:

31600

Nominal Slew Rate:

0.8 V/us

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

5.5 V

Maximum Supply Voltage:

7.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

300 μA

Physical Characteristics

Length:

0.386 in (9.81 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

OPA2344PAG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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