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OPA2300AIDGSRG4

Texas Instruments

OPA2300AIDGSRG4 by Texas Instruments

OPA2300AIDGSRG4 by Texas Instruments is a CMOS operational amplifier with 7000uV max input offset voltage, 80dB nominal CMRR, and 150000kHz unity gain bandwidth. Ideal for automotive applications due to its low-bias current, VFB architecture, and compact square package design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,850 parts In-Stock

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Digiode

USA . 2,678 parts In-Stock

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Parana Technologies

USA . 247 parts In-Stock

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$1.368

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$2.090

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DigiPath Technology Company

USA . 1,087 parts In-Stock

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$1.506

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IDEA Electronic Components Group

UK . 2,369 parts In-Stock

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$1.537

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$1.383

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ChromeModa Solutions

Germany . 1,810 parts In-Stock

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$1.537

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$1.260

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One Stop Electronics

USA . 912 parts In-Stock

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AZTECH Wire

Italy . 624 parts In-Stock

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$18.977

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Corphita

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Perfect Parts

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Microchip USA

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Overview

Discover the unparalleled quality of the OPA2300AIDGSRG4 by Texas Instruments, a top-tier manufacturer in the realm of Operational Amplifiers (Op Amps). This cutting-edge product offers customers a wide range of benefits, from its highly precise performance to its versatile applications. With an emphasis on value and reliability, this operational amplifier is perfect for automotive-grade projects, ensuring optimal functionality and efficiency. Upgrade your design with the OPA2300AIDGSRG4 and experience superior results like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability for the product, ensuring a long lifespan.

Maximum Input Offset Voltage: 7000 uV

Allows for precise and accurate voltage measurements with minimal error.

Maximum Average Bias Current (IIB): 0.000005 uA

Ensures low power consumption and minimal signal distortion.

Surface Mount: YES

Ease of installation and integration into electronic circuits.

No. of Functions: 2

Provides versatility and flexibility for different operational needs.

Nominal Common Mode Reject Ratio: 80 dB

Ensures efficient rejection of common mode noise for cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Suitable for a wide range of applications with a common supply voltage.

Minimum Voltage Gain: 31622.776

High voltage gain for amplifying weak signals effectively.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high input impedance.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying and processing analog signals with high precision.

Technical Specifications

Operational Amplifiers (Op Amps) OPA2300AIDGSRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

150 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Minimum Common Mode Rejection Ratio (CMRR ):

66 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

31622.776

Nominal Slew Rate:

80 V/us

Maximum Input Offset Current (IIO):

5 pA

Peak Bias Current:

5 pA

Maximum Bias Current (IIB) @25 °C:

5 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

24 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

10

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G10

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Trade Compliance

OPA2300AIDGSRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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