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OPA211SKGD1

Texas Instruments

OPA211SKGD1 by Texas Instruments

OPA211SKGD1 by Texas Instruments is an Operational Amplifier with a Max Input Offset Voltage of 180uV, Max Average Bias Current of 0.2uA, and Nominal Common Mode Reject Ratio of 120dB. This amplifier is ideal for military-grade applications requiring low-offset amplification in a compact rectangular package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,432 parts In-Stock

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Digiode

USA . 4,512 parts In-Stock

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4,512

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Distributors (Availability)

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One Stop Electronics

USA . 695 parts In-Stock

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$2.410

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695

$2.410

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Parana Technologies

USA . 1,163 parts In-Stock

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$6.072

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$6.849

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$6.072

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$6.849

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DigiPath Technology Company

USA . 1,302 parts In-Stock

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$6.686

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$6.151

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$6.686

$6.151

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ChromeModa Solutions

Germany . 6,989 parts In-Stock

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$6.822

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$5.594

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6,989

$6.822

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IDEA Electronic Components Group

UK . 640 parts In-Stock

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$6.822

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$6.140

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640

$6.822

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$6.140

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AZTECH Wire

Italy . 558 parts In-Stock

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$18.433

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$18.433

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Microchip USA

USA . 1,206 parts In-Stock

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$116.270

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$114.240

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$113.230

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$112.220

1,206

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$112.220

Corphita

USA . 2,751 parts In-Stock

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Overview

Enhance your electronic designs with the OPA211SKGD1 from Texas Instruments. This high-quality operational amplifier offers precision and reliability for a wide range of applications. With its low-offset and wideband capabilities, this amplifier provides superior performance in demanding environments. Trust in Texas Instruments' reputation for excellence and elevate your projects with the OPA211SKGD1.

Feature Benefit Bullets

Maximum Input Offset Voltage: 180 uV

Low input offset voltage ensures accuracy in signal processing applications.

Maximum Average Bias Current (IIB): 0.2 uA

Low bias current helps in reducing power consumption and improving the stability of the amplifier.

Surface Mount: YES

Surface mount technology allows for easy and compact PCB assembly.

Nominal Common Mode Reject Ratio: 120 dB

High common mode rejection ratio ensures that the amplifier rejects noise and interference effectively.

Nominal Supply Voltage / Vsup (V): 15

Optimal supply voltage for the amplifier's operation.

Number of Terminals: 7

Simplified design with a limited number of terminals for easy integration.

Maximum Input Offset Current (IIO): 0.15 uA

Low input offset current ensures minimal error in signal amplification.

Maximum Supply Voltage Limit: 20 V

Wide supply voltage range allows for versatile application in different circuit setups.

Maximum Operating Temperature: 210 °C

High operating temperature range suitable for demanding industrial environments.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations in the amplifier circuit.

Minimum Voltage Gain: 316227.766

High minimum voltage gain ensures efficient amplification of input signals.

Minimum Operating Temperature: -55 °C

Wide operating temperature range suitable for both extreme cold and hot conditions.

Low-Offset: YES

Low offset voltage and current contribute to high precision and accuracy in signal processing.

Nominal Unity Gain Bandwidth: 45000 kHz

High unity gain bandwidth allows for amplification of high-frequency signals.

Technology: BIPOLAR

Bipolar technology offers high performance and reliability in operational amplifiers.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying signals with high accuracy and low distortion.

Maximum Supply Current: 6 mA

Low supply current consumption for energy-efficient operation.

Nominal Slow Rate: 27 V/us

Slow rate of change in output voltage ensures stability in transient response.

Wideband: YES

Wideband amplifier suitable for applications requiring high-frequency signal amplification.

Technical Specifications

Operational Amplifiers (Op Amps) OPA211SKGD1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

Yes

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

45 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

120 dB

Minimum Common Mode Rejection Ratio (CMRR ):

114 dB

Input Offset Voltage Limit:

180 uV

Minimum Voltage Gain:

316227.766

Nominal Slew Rate:

27 V/us

Maximum Input Offset Current (IIO):

150 nA

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

200 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

20 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

210 °C (410 °F)

Maximum Supply Current:

6 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Total Terminals:

7

Terminal Position:

Upper

Terminal Form:

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-XUUC-N7

Packaging and Shipping

Package Code:

DIE

Package Shape:

Package Style:

Uncased Chip

Trade Compliance

OPA211SKGD1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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