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MUX36D04IRRJR

Texas Instruments

MUX36D04IRRJR by Texas Instruments

MUX36D04IRRJR by Texas Instruments is a CMOS differential multiplexer with 2 channels. It operates at -40 to 125 °C, with Vsup ranging from -18V to 18V. With a bandwidth of 500 kHz and on-state resistance of 430 ohm, it's ideal for automotive applications requiring high isolation and fast switching times.

Median Price

$5.417

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 12,988 parts In-Stock

1+ parts

$5.417

100+ parts

$4.416

1k+ parts

$2.944

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12,988

$5.417

$4.416

$2.944

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Distributors (In-Stock)

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Digiode

USA . 1,337 parts In-Stock

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$5.146

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1,337

$5.146

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Vyrian

USA . 3,889 parts In-Stock

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3,889

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Sensible Micro Corp

USA . 30 parts In-Stock

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ComSIT Distribution GmbH

Germany . 23 parts In-Stock

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23

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Distributors (Availability)

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Corphita

USA . 861 parts In-Stock

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$4.875

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861

$4.875

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Parana Technologies

USA . 979 parts In-Stock

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$19.041

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$19.095

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979

$19.041

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$19.095

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AZTECH Wire

Italy . 121 parts In-Stock

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$19.340

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$19.340

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ChromeModa Solutions

Germany . 2,362 parts In-Stock

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$21.394

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$17.543

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2,362

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IDEA Electronic Components Group

UK . 2,000 parts In-Stock

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$21.394

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$20.324

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$19.255

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$21.394

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DigiPath Technology Company

USA . 921 parts In-Stock

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$19.289

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921

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Overview

Upgrade your technology with the MUX36D04IRRJR by Texas Instruments, a high-quality multiplexer that offers unmatched performance and reliability. Designed by the reputable manufacturer, Texas Instruments, this product is perfect for a wide range of applications in the automotive industry, ensuring seamless operation and precision. With its innovative features and advanced technology, this differential multiplexer provides customers with exceptional value, efficiency, and peace of mind. Choose the MUX36D04IRRJR for superior quality and unmatched results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the product suitable for various applications.

Surface Mount: YES

Surface mount design allows for easy installation and space-saving on PCBs.

Nominal Supply Voltage (Vsup): 15 V

Optimal supply voltage ensures stable performance of the multiplexer.

No. of Terminals: 16

Sufficient number of terminals for connectivity and signal processing.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliability in various environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency of the multiplexer.

Technical Specifications

Multiplexers & Switches MUX36D04IRRJR attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

Nominal Bandwidth:

500 kHz

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

1

Maximum Negative Supply Voltage (Vsup):

-18 V

Minimum Negative Supply Voltage (Vsup):

-5 V

Nominal Negative Supply Voltage (Vsup):

-15 V

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

16

Nominal Off-state Isolation:

85 dB

Nominal On-state Resistance Match:

2.4 ohm

Maximum On-state Resistance (Ron):

430 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Current (Isup):

.062 mA

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

5 V

Nominal Supply Voltage (Vsup):

15 V

Surface Mount:

YES

Maximum Switch-off Time:

90 ns

Maximum Switch-on Time:

151 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4 mm

Trade Compliance

MUX36D04IRRJR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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