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MSP430G2113IRHB32R

Texas Instruments

MSP430G2113IRHB32R by Texas Instruments

MSP430G2113IRHB32R by Texas Instruments is a 16-bit microcontroller with 1024 ROM words and 256 RAM bytes. Operating at -40 to 85°C, it has a supply current of 0.42 mA and runs on power supplies of 2/3.3V. Ideal for industrial applications requiring low power consumption and high performance in a compact chip carrier package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,154 parts In-Stock

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7,154

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Digiode

USA . 3,143 parts In-Stock

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3,143

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Distributors (Availability)

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One Stop Electronics

USA . 1,405 parts In-Stock

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$10.000

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1,405

$10.000

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AZTECH Wire

Italy . 637 parts In-Stock

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$14.515

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637

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Parana Technologies

USA . 781 parts In-Stock

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$36.697

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781

$36.697

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DigiPath Technology Company

USA . 399 parts In-Stock

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$40.408

100+ parts

$37.176

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399

$40.408

$37.176

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ChromeModa Solutions

Germany . 5,821 parts In-Stock

1+ parts

$41.233

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$33.811

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5,821

$41.233

$33.811

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IDEA Electronic Components Group

UK . 210 parts In-Stock

1+ parts

$41.233

100+ parts

$39.171

1k+ parts

$37.110

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210

$41.233

$39.171

$37.110

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QUARKTWIN TECHNOLOGY LTD

USA . 5,234 parts In-Stock

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Corphita

USA . 2,293 parts In-Stock

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Microchip USA

USA . 251 parts In-Stock

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Overview

Unlock endless possibilities with the MSP430G2113IRHB32R by Texas Instruments, a top-tier microcontroller that guarantees superior quality and reliability. Designed by the renowned manufacturer, this chip carrier package boasts a 16-bit size and a flash ROM programmability for seamless performance. Ideal for industrial applications, this microcontroller offers 256 RAM bytes and operates efficiently at temperatures ranging from -40°C to 85°C. Experience unparalleled value and efficiency with the MSP430G2113IRHB32R, a game-changer in the world of microcontrollers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, making it suitable for portable and rugged applications.

Surface Mount: YES

Surface mount technology allows for easy and quick assembly onto PCBs, saving time and effort in manufacturing processes.

Bit Size: 16

With a 16-bit architecture, this microcontroller can process data more efficiently and handle more complex tasks compared to lower bit size microcontrollers.

Power Supplies (V): 2/3.3

Support for multiple power supply voltages allows for flexibility in designing and powering the microcontroller in different applications.

No. of Terminals: 32

The 32 terminals provide versatility in connecting peripherals and external components to the microcontroller, expanding its functionality.

ROM Words: 1024

With 1024 ROM words, the microcontroller has sufficient memory capacity for storing program instructions and data.

RAM Bytes: 256

The 256 bytes of RAM provide temporary storage for data during program execution, enabling efficient processing and manipulation of information.

Technology: CMOS

Complementary metal-oxide-semiconductor (CMOS) technology offers low power consumption, high noise immunity, and compatibility with a wide range of digital circuits.

ROM Programmability: FLASH

The use of flash memory for ROM programming allows for easy reprogramming of the microcontroller, enhancing flexibility and adaptability in application development.

Technical Specifications

Microcontrollers MSP430G2113IRHB32R attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

Bit Size:

16

CPU Family:

MSP430

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

2

No. of Terminals:

32

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/3.3

Qualification:

Not Qualified

RAM Bytes:

256

ROM Words:

1024

ROM Programmability:

FLASH

Speed:

16 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

.42 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Peripheral IC Type:

Trade Compliance

MSP430G2113IRHB32R Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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