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MSP430FR5868IRGZR

Texas Instruments

MSP430FR5868IRGZR by Texas Instruments

MSP430FR5868IRGZR by Texas Instruments is a 16-bit microcontroller with 18-Ch 12-Bit ADC, 15 timers, and FRAM ROM. Ideal for industrial applications due to its low power mode, operating temperature range of -40 to 85 °C, and connectivity options like I2C, SPI, UART. With a max clock frequency of 16 MHz and package size of 7x7 mm², it offers high performance in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,770 parts In-Stock

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Digiode

USA . 917 parts In-Stock

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917

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Distributors (Availability)

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AZTECH Wire

Italy . 359 parts In-Stock

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$16.754

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359

$16.754

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One Stop Electronics

USA . 1,566 parts In-Stock

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$19.000

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Parana Technologies

USA . 1,660 parts In-Stock

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$68.351

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DigiPath Technology Company

USA . 1,160 parts In-Stock

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$75.263

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$69.242

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1,160

$75.263

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ChromeModa Solutions

Germany . 6,977 parts In-Stock

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$76.799

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$62.975

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IDEA Electronic Components Group

UK . 1,871 parts In-Stock

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$76.799

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$72.959

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$69.119

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Corphita

USA . 898 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the MSP430FR5868IRGZR microcontroller by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and innovation in their products. Ideal for a wide range of applications, this microcontroller offers exceptional value and benefits to customers. With advanced features like low power mode, PWM channels, and multiple connectivity options, the MSP430FR5868IRGZR provides a seamless user experience and optimum functionality. Upgrade your projects with this cutting-edge microcontroller and unleash endless possibilities today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for package body helps in reducing overall weight of the product, making it suitable for portable applications.

Maximum Supply Voltage: 3.6 V

High maximum supply voltage allows for flexibility in different power supply setups without causing damage to the microcontroller.

Bit Size: 16

Having a 16-bit architecture provides higher computational power and precision for handling complex algorithms and calculations.

ADC Channels: YES

Integrated Analog to Digital Converters enable the microcontroller to interface with analog sensors and signals, expanding its application possibilities.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture ensures efficient use of instructions and resources, leading to faster execution of tasks and optimal performance.

Nominal Supply Voltage: 3 V

Stable nominal supply voltage ensures consistent operation of the microcontroller under various conditions, contributing to reliability of the product.

Connectivity: 'I2C, IRDA, SPI(1), UART, USCI(3)'

Multiple communication interfaces enable seamless connection to external devices, facilitating data exchange and system integration.

Low Power Mode: YES

Incorporating low power modes helps in reducing energy consumption during idle or standby periods, enhancing energy efficiency of the product.

Technical Specifications

Microcontrollers MSP430FR5868IRGZR attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

16

Boundary Scan:

YES

CPU Family:

MSP430

Maximum Clock Frequency:

16 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

NO

JESD-30 Code:

S-PQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

3

No. of External Interrupts:

0

No. of I/O Lines:

40

No. of Serial I/Os:

2

No. of Terminals:

48

No. of Timers:

15

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

RAM Bytes:

2048

RAM Words:

2

ROM Words:

49152

ROM Programmability:

FRAM

Maximum Seated Height:

1 mm

Speed:

16 rpm

Maximum Supply Current:

1.62 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

1.8 V

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

"I2C, IRDA, SPI(1), UART, USCI(3)"

Peripherals:

"COMPARATOR, CRC,RTC, TIMER(15), WDT"

Analog To Digital Convertors:

18-Ch 12-Bit

Trade Compliance

MSP430FR5868IRGZR Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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