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MSP430F2132IRTVR

Texas Instruments

MSP430F2132IRTVR by Texas Instruments

MSP430F2132IRTVR by Texas Instruments is a 16-bit microcontroller with 8192 ROM words, 512 RAM bytes, and 24 I/O lines. It operates at a max frequency of 16 MHz and has PWM channels for applications in industrial temperature grade environments. The chip carrier package style with a very thin profile makes it suitable for compact designs requiring low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,095 parts In-Stock

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Digiode

USA . 696 parts In-Stock

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696

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Distributors (Availability)

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AZTECH Wire

Italy . 561 parts In-Stock

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$13.120

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561

$13.120

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One Stop Electronics

USA . 219 parts In-Stock

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$27.000

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219

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Parana Technologies

USA . 1,986 parts In-Stock

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$45.292

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$4,206.058

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$40.763

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1,986

$45.292

$4,206.058

$40.763

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DigiPath Technology Company

USA . 928 parts In-Stock

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$49.872

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$45.882

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928

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ChromeModa Solutions

Germany . 6,585 parts In-Stock

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$50.890

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$41.730

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6,585

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$41.730

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IDEA Electronic Components Group

UK . 2,331 parts In-Stock

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$50.890

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$48.346

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$45.801

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2,331

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Microchip USA

USA . 5,477 parts In-Stock

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Corphita

USA . 2,793 parts In-Stock

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Overview

Unlock endless possibilities with the Texas Instruments MSP430F2132IRTVR microcontroller. Made with the highest quality materials and cutting-edge technology, this chip carrier with a very thin profile offers unparalleled performance for a wide range of applications. With 24 I/O lines, PWM channels, and ADC channels, this versatile microcontroller is perfect for industrial-grade projects, providing reliability and efficiency every step of the way. Experience the advantages of Texas Instruments' renowned craftsmanship and streamline your designs with the MSP430F2132IRTVR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the microcontroller suitable for a wide range of applications.

Surface Mount: YES

Allows for easy assembly onto circuit boards, saving time and effort during manufacturing.

Bit Size: 16

16-bit architecture allows for more complex computations and data processing compared to lower bit sizes.

Power Supplies (V): 1.8/3.6

Supports a wide range of power supplies, making it versatile in different voltage environments.

No. of Terminals: 32

Sufficient number of terminals for connecting peripherals and external components for enhanced functionality.

ADC Channels: YES

Analog-to-digital converter channels enable the microcontroller to interface with analog sensors and signals.

ROM Words: 8192

Ample memory capacity for storing program instructions and data, allowing for more complex applications to be implemented.

RAM Bytes: 512

Sufficient random access memory for temporary data storage and processing, improving overall performance.

Maximum Clock Frequency: 16 MHz

High clock frequency allows for faster execution of instructions and tasks, enhancing overall speed and responsiveness.

Technology: CMOS

Complementary metal-oxide-semiconductor technology provides low power consumption and high noise immunity, improving efficiency and reliability.

ROM Programmability: FLASH

Flash ROM technology allows for in-circuit programmability and reprogrammability, enabling updates and modifications to the firmware.

Peripheral IC Type: MICROCONTROLLER, RISC

Reduced instruction set computing architecture enhances processing efficiency and performance, making it suitable for embedded applications.

Technical Specifications

Microcontrollers MSP430F2132IRTVR attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Additional Features:

ALSO OPERATES 1.8V MINIMUM SUPPLY AT 6 MHZ

Address Bus Width:

0

Bit Size:

16

CPU Family:

MSP430

Maximum Clock Frequency:

16 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

2

No. of I/O Lines:

24

No. of Terminals:

32

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

RAM Bytes:

512

ROM Words:

8192

ROM Programmability:

FLASH

Maximum Seated Height:

.8 mm

Speed:

16 rpm

Sub-Category:

Microcontrollers

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Peripheral IC Type:

Trade Compliance

MSP430F2132IRTVR Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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