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MSP430F2112IRTVR

Texas Instruments

MSP430F2112IRTVR by Texas Instruments

MSP430F2112IRTVR by Texas Instruments is a 16-bit microcontroller with 2048 ROM words, 256 RAM bytes, and 24 I/O lines. It operates at a max frequency of 16 MHz and has PWM channels for applications in industrial-grade environments requiring low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,982 parts In-Stock

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Digiode

USA . 1,068 parts In-Stock

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One Stop Electronics

USA . 345 parts In-Stock

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$3.000

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345

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Parana Technologies

USA . 34 parts In-Stock

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$15.801

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$1,467.368

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$14.221

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34

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DigiPath Technology Company

USA . 611 parts In-Stock

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$17.399

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611

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ChromeModa Solutions

Germany . 5,013 parts In-Stock

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$17.754

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$14.558

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IDEA Electronic Components Group

UK . 556 parts In-Stock

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$17.754

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$16.866

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$15.979

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556

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AZTECH Wire

Italy . 756 parts In-Stock

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$19.625

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Component Stockers USA

USA . 295 parts In-Stock

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$99.990

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Perfect Parts

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Corphita

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Microchip USA

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Overview

Discover the Texas Instruments MSP430F2112IRTVR, a powerful microcontroller designed to meet all your industrial application needs. With cutting-edge technology and top-quality manufacturing by Texas Instruments, this microcontroller offers unmatched performance and reliability. From PWM channels to ADC channels, this chip has it all, providing you with the flexibility and capabilities required for your projects. Invest in the MSP430F2112IRTVR today and experience the superior value and benefits that only Texas Instruments can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the microcontroller suitable for various applications without adding excessive weight to the overall system.

Surface Mount: YES

Surface mount capability allows for easy and efficient soldering onto a PCB, saving time and effort during the manufacturing process.

Bit Size: 16

The 16-bit architecture allows for more complex processing and calculations compared to 8-bit microcontrollers, making it suitable for advanced applications.

Power Supplies (V): 1.8/3.6

The dual voltage support provides flexibility in power requirements, allowing the microcontroller to be used in a wide range of power supply configurations.

No. of Terminals: 32

Having a higher number of terminals allows for more connections and peripherals to be interfaced with the microcontroller, increasing its versatility and functionality.

ADC Channels: YES

The presence of ADC channels enables the microcontroller to convert analog signals into digital data, making it suitable for sensor interfacing and data acquisition applications.

ROM Words: 2048

The 2048 words of ROM memory allow for program storage and execution, providing ample space for code and firmware development.

RAM Bytes: 256

With 256 bytes of RAM, the microcontroller can efficiently store and access temporary data during program execution, enhancing its processing capabilities.

PWM Channels: YES

The availability of PWM channels enables the microcontroller to generate precise and adjustable pulse-width modulation signals, useful for controlling motors, LEDs, and other analog devices.

Technical Specifications

Microcontrollers MSP430F2112IRTVR attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Additional Features:

ALSO OPERATES 1.8V MINIMUM SUPPLY AT 6 MHZ

Address Bus Width:

0

Bit Size:

16

CPU Family:

MSP430

Maximum Clock Frequency:

16 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

2

No. of I/O Lines:

24

No. of Terminals:

32

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

RAM Bytes:

256

ROM Words:

2048

ROM Programmability:

FLASH

Maximum Seated Height:

.8 mm

Speed:

16 rpm

Sub-Category:

Microcontrollers

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Peripheral IC Type:

Trade Compliance

MSP430F2112IRTVR Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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