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LT1009IDRG4

Texas Instruments

LT1009IDRG4 by Texas Instruments

LT1009IDRG4 by Texas Instruments is a voltage reference with trimmable output (2.475-2.525V) and 1% max voltage tolerance. Ideal for industrial applications, it operates b/w -40 to 85°C, in a small outline package with gull wing terminals for surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 22,140 parts In-Stock

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Vyrian

USA . 8,931 parts In-Stock

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Digiode

USA . 2,935 parts In-Stock

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2,935

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Nova Conductors

Japan . 10 parts In-Stock

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10

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One Stop Electronics

USA . 1,211 parts In-Stock

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$3.500

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$3.500

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Semicontronic

India . 1,551 parts In-Stock

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$5.500

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$5.362

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$5.335

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1,551

$5.500

$5.362

$5.335

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Ampacity Inc.

Singapore . 230 parts In-Stock

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$6.500

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230

$6.500

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Parana Technologies

USA . 1,576 parts In-Stock

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$9.010

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$9.680

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1,576

$9.010

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$9.680

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DigiPath Technology Company

USA . 850 parts In-Stock

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$9.922

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$9.128

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$9.922

$9.128

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ChromeModa Solutions

Germany . 2,313 parts In-Stock

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$10.124

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$8.302

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$10.124

$8.302

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IDEA Electronic Components Group

UK . 193 parts In-Stock

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$10.124

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$9.618

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$9.112

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193

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$9.112

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AZTECH Wire

Italy . 229 parts In-Stock

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$11.468

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Advanced Electronics

New Zealand . 57 parts In-Stock

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$17.574

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$16.695

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$16.695

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57

$17.574

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$16.695

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Corohmni

South Africa . 605 parts In-Stock

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$18.992

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Continental Prestige Electronics

USA . 5,557 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,082 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,388 parts In-Stock

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Microchip USA

USA . 1,520 parts In-Stock

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Corphita

USA . 1,369 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Argo Parts USA

USA . 751 parts In-Stock

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Perfect Parts

USA . 332 parts In-Stock

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Overview

Elevate your electronic designs with the LT1009IDRG4 by Texas Instruments. As a leader in manufacturing high-quality voltage references, Texas Instruments delivers exceptional performance and reliability. With its trimmable output and compact design, this voltage reference is perfect for a wide range of applications. Whether you're designing precision instruments or power management systems, the LT1009IDRG4 offers unparalleled value, accuracy, and stability. Trust Texas Instruments to provide you with the best-in-class components for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the voltage reference, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and convenient integration into circuit boards, saving space and simplifying assembly.

Trim or Adjustable Output (V): YES

Ability to adjust the output voltage allows for fine-tuning and customization in various applications.

Minimum Operating Temperature: -40 °C

Can operate effectively in low temperature environments, providing reliability in a wide range of conditions.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during manufacturing processes, ensuring stable performance.

Technology: BIPOLAR

Utilizes bipolar technology for accurate voltage referencing, making it suitable for precision applications.

Nominal Output Voltage: 2.5 V

Provides a stable and consistent output voltage, meeting the requirements of many electronic circuits.

Technical Specifications

Voltage References LT1009IDRG4 attributes and parameters. Explore more Voltage References devices from Texas Instruments

Specs

Additional Features:

+/-5 PERCENT ADJUSTABLE REFERENCE VOLTAGE

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

2.525 V

Minimum Output Voltage:

2.475 V

Nominal Output Voltage:

2.5 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Voltage References

Surface Mount:

YES

Technology:

BIPOLAR

Max Voltage Temp Coef:

35 ppm/Cel

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trim or Adjustable Output (V):

YES

Maximum Voltage Tolerance:

1 %

Width (mm):

3.9 mm

Trade Compliance

LT1009IDRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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