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LMX2332LTM

Texas Instruments

LMX2332LTM by Texas Instruments

LMX2332LTM by Texas Instruments is a PLL frequency synthesizer with 20 terminals, operating at -40 to 85°C. It features a BICMOS technology, consuming 4.1mA at 3/5V supplies. Ideal for applications requiring precise frequency synthesis in industrial settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,629 parts In-Stock

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4,629

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Chip Stock

USA . 3,080 parts In-Stock

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3,080

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Digiode

USA . 2,028 parts In-Stock

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2,028

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Anansix

USA . 191 parts In-Stock

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Beltway Electronics Company

USA . 18 parts In-Stock

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One Stop Electronics

USA . 720 parts In-Stock

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$5.500

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720

$5.500

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Parana Technologies

USA . 1,319 parts In-Stock

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$6.372

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$7.120

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1,319

$6.372

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$7.120

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IDEA Electronic Components Group

UK . 763 parts In-Stock

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$7.159

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$6.443

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763

$7.159

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$6.443

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ChromeModa Solutions

Germany . 354 parts In-Stock

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$7.159

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$5.870

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354

$7.159

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AZTECH Wire

Italy . 719 parts In-Stock

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$9.393

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719

$9.393

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Lixinc

USA . 3,780 parts In-Stock

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3,780

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Corphita

USA . 2,776 parts In-Stock

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Computer Components Inc. - USA

USA . 2,523 parts In-Stock

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Perfect Parts

USA . 448 parts In-Stock

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DigiPath Technology Company

USA . 205 parts In-Stock

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$6.455

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$6.455

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Overview

Enhance your electronic designs with the LMX2332LTM by Texas Instruments, a top-quality Phase Locked Loop (PLL) & Frequency Synthesis Circuit. Manufactured with precision and expertise, this product offers unparalleled performance and reliability for a wide range of applications. With a compact package and low power consumption, the LMX2332LTM provides exceptional value and benefits to customers looking for cutting-edge solutions in frequency synthesis. Trust Texas Instruments for innovative technology that meets your needs and exceeds your expectations. Elevate your projects with the LMX2332LTM today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Power Supplies (V): 3/5

Compatible with common voltage supplies, making integration into existing systems easier.

No. of Terminals: 20

Provides multiple connection points for flexibility in circuit design.

Maximum Operating Temperature: 85 °C

Can withstand high temperature environments, suitable for industrial applications.

Technology: BICMOS

Combines the advantages of both bipolar and CMOS technologies, offering high performance and low power consumption.

Nominal Bandwidth: 4.4 kHz

Provides a wide bandwidth for frequency synthesis, allowing for precise control and stability.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits LMX2332LTM attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Texas Instruments

Specs

Other IC type:

Nominal Bandwidth:

4.4 kHz

JESD-30 Code:

R-PDSO-G20

Length:

6.5 mm

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP20,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

PLL or Frequency Synthesis Circuits

Maximum Supply Current (Isup):

4.1 mA

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

4.4 mm

Trade Compliance

LMX2332LTM Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-596-9207, 5962015969207

NIIN

015969207

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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