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LMV932IDRG4

Texas Instruments

LMV932IDRG4 by Texas Instruments

LMV932IDRG4 by Texas Instruments is a CMOS Operational Amplifier with 2 functions, featuring a max input offset voltage of 7500 uV and a nominal unity gain bandwidth of 1400 kHz. Ideal for automotive applications due to its micropower consumption and wide operating temperature range from -40 to 125 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 6,310 parts In-Stock

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Euro-Tech

UK . 3,728 parts In-Stock

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Digiode

USA . 1,528 parts In-Stock

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Parana Technologies

USA . 160 parts In-Stock

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$0.526

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$1.638

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160

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ChromeModa Solutions

Germany . 2,350 parts In-Stock

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$0.591

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$0.485

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IDEA Electronic Components Group

UK . 1,609 parts In-Stock

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$0.532

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One Stop Electronics

USA . 995 parts In-Stock

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$6.410

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995

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AZTECH Wire

Italy . 673 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

USA . 7,031 parts In-Stock

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Corphita

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Microchip USA

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DigiPath Technology Company

USA . 249 parts In-Stock

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Overview

Discover the LMV932IDRG4 by Texas Instruments, a top-quality operational amplifier designed to exceed expectations in a wide range of applications. With a reputation for excellence, Texas Instruments delivers superior performance and reliability. This versatile op amp offers customers exceptional value, providing benefits such as precision, efficiency, and versatility. Whether used in automotive, industrial, or consumer electronics, the LMV932IDRG4 ensures optimal functionality and seamless integration. Experience the advantages of Texas Instruments technology with the LMV932IDRG4 operational amplifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection to the internal components of the operational amplifier, making it suitable for various applications.

Maximum Input Offset Voltage: 7500 uV

Low input offset voltage ensures accurate signal processing and minimal error in the output signal.

No. of Functions: 2

Having multiple functions in a single component increases the efficiency and versatility of the operational amplifier in different circuits.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage allows for energy-efficient operation and compatibility with low-power applications.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures reliable performance in various environmental conditions, making it suitable for automotive applications.

Technology: CMOS

CMOS technology offers low power consumption, high input impedance, and fast switching speeds, making it an ideal choice for low-power applications.

Technical Specifications

Operational Amplifiers (Op Amps) LMV932IDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

1.8/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

81 dB

Input Offset Voltage Limit:

7500 uV

Minimum Voltage Gain:

3980

Nominal Slew Rate:

0.35 V/us

Peak Bias Current:

75 nA

Maximum Bias Current (IIB) @25 °C:

65 nA

Operational Characteristics

Nominal Supply Voltage:

1.8 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

460 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

LMV932IDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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