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LMV824IDRE4

Texas Instruments

LMV824IDRE4 by Texas Instruments

LMV824IDRE4 by Texas Instruments is a micropower operational amplifier with 4 functions, offering a max input offset voltage of 5500 uV and nominal common mode reject ratio of 85 dB. Ideal for automotive applications, this op amp operates at temperatures ranging from -40 to 125 °C and has a unity gain bandwidth of 5000 kHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,673 parts In-Stock

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Digiode

USA . 2,000 parts In-Stock

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2,000

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One Stop Electronics

USA . 1,551 parts In-Stock

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$0.410

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1,551

$0.410

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Parana Technologies

USA . 458 parts In-Stock

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$1.068

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$1.921

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458

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DigiPath Technology Company

USA . 2,076 parts In-Stock

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$1.176

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$1.082

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$1.176

$1.082

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ChromeModa Solutions

Germany . 1,138 parts In-Stock

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$1.200

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$0.984

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$0.984

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IDEA Electronic Components Group

UK . 226 parts In-Stock

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$1.200

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$1.080

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226

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$1.080

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AZTECH Wire

Italy . 829 parts In-Stock

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$10.630

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829

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Component Stockers USA

USA . 395 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 19,623 parts In-Stock

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Corphita

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Microchip USA

USA . 324 parts In-Stock

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Overview

Enhance your electronic designs with the LMV824IDRE4 from Texas Instruments, a top-tier manufacturer known for its high-quality operational amplifiers. Ideal for a variety of applications, this versatile product offers customers unmatched value and benefits. With its advanced features and reliable performance, the LMV824IDRE4 provides superior functionality and efficiency. Upgrade your projects with this innovative solution today and experience the advantages of cutting-edge technology in a compact and durable package.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, making it suitable for various applications.

Maximum Input Offset Voltage: 5500 uV

Low offset voltage ensures high precision and accuracy in signal processing.

Maximum Average Bias Current (IIB): 0.14 uA

Low bias current helps in reducing power consumption and improves overall efficiency.

Surface Mount: YES

Enables easy integration onto PCBs, saving space and simplifying assembly process.

Nominal Common Mode Reject Ratio: 85 dB

High common mode rejection ratio helps in minimizing noise and interference from input signals.

Nominal Supply Voltage / Vsup (V): 2.7

Optimal supply voltage for efficient operation and performance.

Frequency Compensation: YES

Ensures stability of the amplifier and prevents oscillations.

Nominal Unity Gain Bandwidth: 5000 kHz

High unity gain bandwidth allows for fast and accurate signal processing.

Technology: BIPOLAR

Bipolar technology offers high linearity and low noise performance.

Amplifier Type: OPERATIONAL AMPLIFIER

Op Amps are versatile and commonly used in various applications requiring signal amplification and processing.

Technical Specifications

Operational Amplifiers (Op Amps) LMV824IDRE4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.5/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

5500 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

1.7 V/us

Peak Bias Current:

140 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.5 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

LMV824IDRE4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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