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LMV822IDRG4

Texas Instruments

LMV822IDRG4 by Texas Instruments

LMV822IDRG4 by Texas Instruments is a dual operational amplifier with 5500uV max input offset voltage, 85dB CMRR, and 1.4V/us min slew rate. Ideal for automotive applications due to its micropower feature, it operates at -40 to 125 °C with a supply voltage of 2.5/5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,945 parts In-Stock

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8,945

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Digiode

USA . 508 parts In-Stock

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508

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 100 parts In-Stock

1+ parts

$2.672

100+ parts

-

1k+ parts

$3.157

10k+ parts

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100

$2.672

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$3.157

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DigiPath Technology Company

USA . 962 parts In-Stock

1+ parts

$2.942

100+ parts

$2.707

1k+ parts

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962

$2.942

$2.707

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ChromeModa Solutions

Germany . 3,416 parts In-Stock

1+ parts

$3.002

100+ parts

$2.462

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3,416

$3.002

$2.462

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IDEA Electronic Components Group

UK . 7 parts In-Stock

1+ parts

$3.002

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$2.702

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7

$3.002

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$2.702

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One Stop Electronics

USA . 856 parts In-Stock

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$7.410

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856

$7.410

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AZTECH Wire

Italy . 680 parts In-Stock

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$11.295

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680

$11.295

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Corphita

USA . 2,926 parts In-Stock

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2,926

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A-Z Elektronik GmbH

Germany . 1,047 parts In-Stock

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1,047

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Microchip USA

USA . 372 parts In-Stock

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372

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Overview

Experience unmatched performance and reliability with the LMV822IDRG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality operational amplifiers for a wide range of applications. The LMV822IDRG4 offers exceptional value with its low bias current, high common-mode rejection ratio, and micropower technology. Whether you're designing automotive systems or precision instruments, this versatile op amp is sure to meet your needs. Trust Texas Instruments for cutting-edge technology and superior quality in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and versatile material allows for a compact and lightweight design, making it suitable for a variety of applications.

Maximum Input Offset Voltage: 5500 uV

The low input offset voltage ensures accurate and reliable signal processing, making this op amp ideal for precision applications.

Nominal Common Mode Reject Ratio: 85 dB

With a high common mode rejection ratio, this op amp is able to effectively filter out unwanted noise and interference for clean output signals.

Nominal Supply Voltage / Vsup (V): 2.7

The low supply voltage requirement makes this op amp energy-efficient and suitable for battery-powered devices.

Technology: BIPOLAR

Bipolar technology offers high performance and stability, making this op amp a reliable choice for a wide range of applications.

Technical Specifications

Operational Amplifiers (Op Amps) LMV822IDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.5/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

5500 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

1.4 V/us

Nominal Slew Rate:

1.7 V/us

Peak Bias Current:

140 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

900 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

LMV822IDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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