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LMV822IDGKRG4

Texas Instruments

LMV822IDGKRG4 by Texas Instruments

LMV822IDGKRG4 by Texas Instruments is a dual operational amplifier with a max input offset voltage of 5500uV and max supply voltage limit of 5.5V. It is ideal for automotive applications due to its micropower feature, operating temperature range from -40 to 125 °C, and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 4,750 parts In-Stock

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Vyrian

USA . 2,798 parts In-Stock

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Digiode

USA . 1,907 parts In-Stock

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Euro-Tech

UK . 1,620 parts In-Stock

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Parana Technologies

USA . 1,610 parts In-Stock

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$1.591

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$2.224

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$1.591

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DigiPath Technology Company

USA . 2,358 parts In-Stock

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$1.752

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$1.612

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IDEA Electronic Components Group

UK . 2,296 parts In-Stock

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$1.788

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$1.609

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ChromeModa Solutions

Germany . 2,166 parts In-Stock

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$1.788

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$1.466

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One Stop Electronics

USA . 1,596 parts In-Stock

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$7.410

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AZTECH Wire

Italy . 604 parts In-Stock

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$9.279

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A-Z Elektronik GmbH

Germany . 7,236 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,824 parts In-Stock

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Kepictronics

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Corphita

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Microchip USA

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Overview

Discover the LMV822IDGKRG4 by Texas Instruments, a high-quality operational amplifier designed for a wide range of applications. With Texas Instruments' reputation for excellence in manufacturing, this dual-function Op Amp offers customers superior performance and reliability. From automotive to industrial applications, this versatile component provides a nominal unity gain bandwidth of 5000 kHz and minimal bias current, ensuring optimal efficiency and precision in your designs. Trust Texas Instruments for cutting-edge technology that delivers unparalleled value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, suitable for various applications.

Maximum Input Offset Voltage: 5500 uV

The low maximum input offset voltage ensures minimal errors in amplification, making this product ideal for precision applications.

Surface Mount: YES

Being surface mountable, this product can be easily integrated into circuit boards, saving space and simplifying assembly.

Nominal Common Mode Reject Ratio: 85 dB

With a high common mode reject ratio, this product is excellent at rejecting noise and interference, ensuring clean signal amplification.

Minimum Slew Rate: 1.4 V/us

The minimum slew rate of 1.4V/us ensures fast response times, making this product suitable for dynamic signal processing applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this product can withstand elevated temperatures, suitable for industrial and automotive environments.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product offers high gain and accuracy, making it versatile for a wide range of analog signal processing tasks.

Technical Specifications

Operational Amplifiers (Op Amps) LMV822IDGKRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.5/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

5500 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

1.4 V/us

Nominal Slew Rate:

1.7 V/us

Peak Bias Current:

140 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

900 μA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

LMV822IDGKRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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