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LMV822DGKRG4

Texas Instruments

LMV822DGKRG4 by Texas Instruments

LMV822DGKRG4 by Texas Instruments is a dual operational amplifier with a max input offset voltage of 4000uV and max average bias current of 0.14uA. It is ideal for industrial applications requiring low power consumption, high common mode rejection ratio, and wide temperature range. The package style is small outline, thin profile, shrink pitch with gull wing terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,346 parts In-Stock

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Chip Stock

USA . 6,150 parts In-Stock

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Euro-Tech

UK . 5,070 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 928 parts In-Stock

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Digiode

USA . 659 parts In-Stock

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Parana Technologies

USA . 2,103 parts In-Stock

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$2.131

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$2.643

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DigiPath Technology Company

USA . 2,216 parts In-Stock

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$2.346

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$2.158

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ChromeModa Solutions

Germany . 3,825 parts In-Stock

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$2.394

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$1.963

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IDEA Electronic Components Group

UK . 1,495 parts In-Stock

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$2.394

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$2.155

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One Stop Electronics

USA . 703 parts In-Stock

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$4.410

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AZTECH Wire

Italy . 706 parts In-Stock

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$14.350

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Component Stockers USA

USA . 691 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 8,032 parts In-Stock

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Microchip USA

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Kepictronics

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Alle Elektronik GmbH

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Corphita

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Overview

Elevate your electronic designs with the LMV822DGKRG4 from Texas Instruments, a leading manufacturer known for superior quality and reliability. As part of the Operational Amplifiers category, this powerful dual-function device offers unparalleled performance in a compact, easy-to-use package. With a wide range of applications and micropower technology, this amplifier provides customers with unmatched value, efficiency, and precision. Upgrade your projects today with the LMV822DGKRG4 and experience the difference TI products can make in your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 4000 uV

Low input offset voltage helps in reducing errors in the output signal, resulting in accurate amplification of input signals.

No. of Functions: 2

Having multiple functions in a single package can save space on the circuit board and simplify circuit design.

Nominal Common Mode Reject Ratio: 85 dB

High common mode rejection ratio helps in rejecting common mode signals and noise, leading to a clean output signal.

Minimum Slew Rate: 1.4 V/us

Fast slew rate allows the operational amplifier to respond quickly to input signal changes, making it suitable for applications requiring fast response times.

Maximum Supply Voltage Limit: 5.5 V

Wide supply voltage range provides flexibility in power supply options, making it compatible with a variety of system configurations.

Maximum Operating Temperature: 85 °C

High operating temperature range ensures reliable performance in harsh environmental conditions.

Nominal Unity Gain Bandwidth: 5000 kHz

High unity gain bandwidth allows for high-frequency response, making this operational amplifier suitable for applications requiring signal amplification in the kHz range.

Technical Specifications

Operational Amplifiers (Op Amps) LMV822DGKRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.5/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

1.4 V/us

Nominal Slew Rate:

1.7 V/us

Peak Bias Current:

140 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

900 μA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

LMV822DGKRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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