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LMV822DGKR

Texas Instruments

LMV822DGKR by Texas Instruments

LMV822DGKR by Texas Instruments is a dual operational amplifier with a max input offset voltage of 4000 uV and a min slew rate of 1.4 V/us. It is ideal for industrial applications requiring micropower consumption, such as sensor signal conditioning and battery-powered devices. The package style is small outline, thin profile, shrink pitch, making it suitable for space-constrained designs.

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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Vyrian

USA . 8,445 parts In-Stock

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Chip Stock

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Sunrise Surplus Inc.

USA . 5,751 parts In-Stock

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Digiode

USA . 2,941 parts In-Stock

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Bristol Electronics

USA . 49 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 3 parts In-Stock

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One Stop Electronics

USA . 1,206 parts In-Stock

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$2.410

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Parana Technologies

USA . 1,820 parts In-Stock

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$4.277

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$4.706

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IDEA Electronic Components Group

UK . 2,321 parts In-Stock

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$4.806

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$4.325

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ChromeModa Solutions

Germany . 1,949 parts In-Stock

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$4.806

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$3.941

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AZTECH Wire

Italy . 832 parts In-Stock

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Authorized Procurement Solutions

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Lixinc

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A-Z Elektronik GmbH

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Microchip USA

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Kepictronics

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DigiPath Technology Company

USA . 1,934 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,266 parts In-Stock

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Corphita

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Assy Fe

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Overview

Experience top-notch performance and reliability with the LMV822DGKR operational amplifier by Texas Instruments. As a trusted industry leader, TI delivers cutting-edge solutions for a wide range of applications. Whether you're designing consumer electronics, industrial equipment, or automotive systems, this high-quality op amp offers unparalleled precision and efficiency. With its micropower technology and wide temperature range, the LMV822DGKR provides exceptional value and performance to meet your unique needs. Elevate your designs with Texas Instruments and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the operational amplifier, making it suitable for various applications and environments.

Maximum Input Offset Voltage: 4000 uV

Low input offset voltage ensures accuracy in signal processing and minimizes errors in the output signal.

Surface Mount: YES

Surface mount design allows for easy and efficient installation on PCBs, saving space and simplifying the manufacturing process.

Nominal Common Mode Reject Ratio: 85 dB

High common mode rejection ratio indicates the ability of the op amp to reject noise and interference from the input signal.

Minimum Slew Rate: 1.4 V/us

Fast slew rate enables the operational amplifier to quickly respond to changes in input signals, making it suitable for applications requiring rapid signal processing.

Nominal Unity Gain Bandwidth: 5000 kHz

High unity gain bandwidth indicates the frequency range over which the op amp can provide stable and accurate amplification, making it suitable for high-frequency applications.

Technology: BIPOLAR

Bipolar technology offers low input bias current and high gain, making the operational amplifier suitable for precision applications requiring high performance.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier ensures that this product is designed for amplifying signals with high accuracy and stability, making it a reliable choice for various applications.

Technical Specifications

Operational Amplifiers (Op Amps) LMV822DGKR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.5/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

1.4 V/us

Nominal Slew Rate:

1.7 V/us

Peak Bias Current:

140 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

900 μA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

LMV822DGKR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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