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LMV821IDBVTG4

Texas Instruments

LMV821IDBVTG4 by Texas Instruments

LMV821IDBVTG4 by Texas Instruments is a micropower operational amplifier with a max input offset voltage of 5500 uV and nominal common mode reject ratio of 85 dB. It is ideal for automotive applications due to its low profile package style and wide temperature range from -40 to 125 °C. This op amp offers high frequency compensation, making it suitable for precision signal processing in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,747 parts In-Stock

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Vyrian

USA . 1,993 parts In-Stock

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1,993

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Distributors (Availability)

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Parana Technologies

USA . 2,157 parts In-Stock

1+ parts

$2.019

100+ parts

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$2.543

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2,157

$2.019

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$2.543

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ChromeModa Solutions

Germany . 6,476 parts In-Stock

1+ parts

$2.268

100+ parts

$1.860

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6,476

$2.268

$1.860

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IDEA Electronic Components Group

UK . 260 parts In-Stock

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$2.268

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$2.041

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260

$2.268

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$2.041

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One Stop Electronics

USA . 145 parts In-Stock

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$4.410

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145

$4.410

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AZTECH Wire

Italy . 251 parts In-Stock

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$13.460

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$13.460

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Corphita

USA . 2,414 parts In-Stock

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DigiPath Technology Company

USA . 746 parts In-Stock

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$2.045

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746

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Microchip USA

USA . 292 parts In-Stock

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Resion (Excess)

USA . 250 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the LMV821IDBVTG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and cutting-edge technology in its operational amplifiers. Perfect for automotive applications, this amplifier offers customers exceptional value with its micropower design, wide temperature range, and high voltage gain. Experience superior functionality and precision with the LMV821IDBVTG4, setting new standards in operational amplifier performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and resistant to external factors, ensuring the longevity of the product.

Maximum Input Offset Voltage: 5500 uV

Low offset voltage allows for accurate signal processing and minimal distortion in the output signal.

Maximum Average Bias Current (IIB): 0.14 uA

Low bias current helps in reducing power consumption and improving overall efficiency of the operational amplifier.

Surface Mount: YES

Surface mount capability makes the installation process easier and suitable for automated production processes.

Nominal Common Mode Reject Ratio: 85 dB

High common mode rejection ratio ensures that the amplifier can effectively reject noise and interference for a clean signal output.

Nominal Supply Voltage / Vsup (V): 2.7

Optimal supply voltage ensures stable performance and reliable operation of the operational amplifier.

No. of Terminals: 5

Having a sufficient number of terminals allows for versatile connectivity options and compatibility with various circuit configurations.

Maximum Supply Voltage Limit: 5.5 V

Higher supply voltage limit provides flexibility in power supply options while ensuring safe operation within specified limits.

Maximum Operating Temperature: 125 °C

Wide operating temperature range enables the operational amplifier to function effectively in various environmental conditions.

Maximum Bias Current (IIB) @25°C: 0.1 uA

Low bias current at a standard temperature ensures consistent performance and minimizes errors in signal processing.

Frequency Compensation: YES

Frequency compensation feature enhances stability and prevents oscillations, improving overall performance of the amplifier.

Minimum Voltage Gain: 10000

High minimum voltage gain allows for amplification of weak signals without significant distortion, ensuring signal integrity.

Width: 1.6 mm

Compact width makes the operational amplifier suitable for space-constrained applications and compact circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Sufficient reflow time ensures proper soldering and reliable connection during the manufacturing process.

Temperature Grade: AUTOMOTIVE

Automotive-grade temperature rating ensures reliable operation in automotive applications where temperature fluctuations may occur.

Nominal Unity Gain Bandwidth: 5000 kHz

High unity gain bandwidth allows for accurate amplification of signals across a wide frequency range, suitable for various applications.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise performance, making the operational amplifier suitable for applications requiring high accuracy.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical stability and ease of soldering during installation, ensuring reliable connections.

Maximum Supply Current: 0.6 mA

Low supply current consumption helps in conserving power and reducing operating costs over time.

Technical Specifications

Operational Amplifiers (Op Amps) LMV821IDBVTG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.5/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

5500 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

1.7 V/us

Peak Bias Current:

140 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

600 μA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

LMV821IDBVTG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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