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LMV821IDBVTE4

Texas Instruments

LMV821IDBVTE4 by Texas Instruments

LMV821IDBVTE4 by Texas Instruments is a micropower operational amplifier with a max input offset voltage of 5500 uV and nominal common mode reject ratio of 85 dB. It is ideal for automotive applications due to its low profile package style, operating temperature range from -40 to 125 °C, and frequency compensation feature.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 8,190 parts In-Stock

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Digiode

USA . 2,287 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 100 parts In-Stock

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$5.739

100+ parts

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$6.531

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100

$5.739

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$6.531

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DigiPath Technology Company

USA . 44 parts In-Stock

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$6.319

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$5.814

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44

$6.319

$5.814

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IDEA Electronic Components Group

UK . 1,901 parts In-Stock

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$6.448

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$5.803

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1,901

$6.448

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$5.803

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ChromeModa Solutions

Germany . 1,403 parts In-Stock

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$6.448

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$5.287

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1,403

$6.448

$5.287

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One Stop Electronics

USA . 502 parts In-Stock

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$8.410

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502

$8.410

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AZTECH Wire

Italy . 885 parts In-Stock

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$17.732

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885

$17.732

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Component Stockers USA

USA . 535 parts In-Stock

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$99.990

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$99.990

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Corphita

USA . 3,255 parts In-Stock

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Microchip USA

USA . 320 parts In-Stock

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Overview

Elevate your designs with the LMV821IDBVTE4 by Texas Instruments, a high-quality operational amplifier that offers unparalleled performance and reliability. With a focus on innovation and precision, Texas Instruments has established itself as a leader in the industry, providing cutting-edge solutions for a wide range of applications. Whether you're working on automotive systems, industrial automation, or consumer electronics, this op amp delivers exceptional value, efficiency, and versatility. Trust Texas Instruments to elevate your projects to the next level with the LMV821IDBVTE4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 5500 uV

Low input offset voltage ensures accurate signal processing and minimal error in the output.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Nominal Common Mode Reject Ratio: 85 dB

High common mode rejection ratio helps in rejecting unwanted noise and interference from the input signals.

Nominal Supply Voltage / Vsup (V): 2.7

Suitable supply voltage for various applications, providing stable performance.

Technology: BIPOLAR

Bipolar technology offers good linearity and stability in signal amplification.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for signal amplification and processing, ensuring high performance in various applications.

Nominal Unity Gain Bandwidth: 5000 kHz

High unity gain bandwidth allows for wide frequency response and efficient signal amplification.

Technical Specifications

Operational Amplifiers (Op Amps) LMV821IDBVTE4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.5/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

5500 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

1.7 V/us

Peak Bias Current:

140 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

600 μA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

LMV821IDBVTE4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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