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LM4041C12IDBZTG4

Texas Instruments

LM4041C12IDBZTG4 by Texas Instruments

LM4041C12IDBZTG4 by Texas Instruments is a voltage reference IC with a min output voltage of 1.219V and max of 1.231V, suitable for industrial applications. It operates b/w -40°C to 85°C, has a small outline package style, and offers a max voltage tolerance of 0.5%.

Median Price

$0.684

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Mouser Electronics

USA . 232 parts In-Stock

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$0.684

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$0.584

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$0.584

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Chip Stock

USA . 53,193 parts In-Stock

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Digiode

USA . 4,767 parts In-Stock

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Vyrian

USA . 3,386 parts In-Stock

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Semicontronic

India . 32 parts In-Stock

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$0.580

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$0.566

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$0.563

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32

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Corohmni

South Africa . 329 parts In-Stock

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$0.684

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$12.732

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$12.605

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$12.096

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Parana Technologies

USA . 2,081 parts In-Stock

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$19.887

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$19.841

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DigiPath Technology Company

USA . 1,784 parts In-Stock

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$21.898

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ChromeModa Solutions

Germany . 4,589 parts In-Stock

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$22.345

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$18.323

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IDEA Electronic Components Group

UK . 2,169 parts In-Stock

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$21.228

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$20.110

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Corphita

USA . 4,266 parts In-Stock

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Microchip USA

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Overview

Unlock the potential of your electronic designs with the LM4041C12IDBZTG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and reliability in their voltage references. Ideal for various applications, this product offers precise output voltages and low temperature coefficients, providing unmatched value to customers. Trust Texas Instruments to deliver exceptional performance and efficiency for all your voltage reference needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and cost-effective housing for the Voltage Reference, ensuring longevity and reliability.

Surface Mount: YES

Allows for easy and efficient installation on printed circuit boards, saving time and effort during assembly.

Minimum Output Voltage: 1.219 V

Provides a precise and stable reference voltage output for various electronic applications.

Minimum Operating Temperature: -40 °C

Ensures the Voltage Reference can operate effectively in extreme temperature environments, making it versatile and reliable.

Peak Reflow Temperature °C: 260

Withstands high temperature reflow processes during manufacturing, ensuring the Voltage Reference remains intact and functional.

Nominal Output Voltage: 1.225 V

Offers a consistent and accurate reference voltage for precise measurements and control in electronic circuits.

Technical Specifications

Voltage References LM4041C12IDBZTG4 attributes and parameters. Explore more Voltage References devices from Texas Instruments

Specs

Additional Features:

OUTPUT VOLTAGE ADJUSTABLE FROM 1.225V TO 10V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Length:

2.92 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

1.231 V

Minimum Output Voltage:

1.219 V

Nominal Output Voltage:

1.225 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TO-236

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.12 mm

Sub-Category:

Voltage References

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

1.225 V

Surface Mount:

YES

Technology:

BIPOLAR

Max Voltage Temp Coef:

100 ppm/Cel

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trim or Adjustable Output (V):

NO

Maximum Voltage Tolerance:

.5 %

Width (mm):

1.3 mm

Trade Compliance

LM4041C12IDBZTG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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