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LM2902KNSE4

Texas Instruments

LM2902KNSE4 by Texas Instruments

LM2902KNSE4 by Texas Instruments is a quad operational amplifier with 4 functions, ideal for automotive applications. It features a max input offset voltage of 10000 uV and nominal unity gain bandwidth of 1200 kHz. With a small outline package style and surface mount capability, it offers high performance in a compact design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,303 parts In-Stock

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Digiode

USA . 3,162 parts In-Stock

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3,162

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Distributors (Availability)

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Parana Technologies

USA . 558 parts In-Stock

1+ parts

$6.115

100+ parts

-

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$6.889

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558

$6.115

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$6.889

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DigiPath Technology Company

USA . 664 parts In-Stock

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$6.734

100+ parts

$6.195

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664

$6.734

$6.195

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ChromeModa Solutions

Germany . 2,486 parts In-Stock

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$6.871

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$5.634

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$6.871

$5.634

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IDEA Electronic Components Group

UK . 1,864 parts In-Stock

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$6.871

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$6.184

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1,864

$6.871

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One Stop Electronics

USA . 444 parts In-Stock

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$8.410

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444

$8.410

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AZTECH Wire

Italy . 734 parts In-Stock

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$18.974

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734

$18.974

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QUARKTWIN TECHNOLOGY LTD

USA . 29,917 parts In-Stock

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Microchip USA

USA . 5,592 parts In-Stock

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Corphita

USA . 1,887 parts In-Stock

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Overview

Experience the unmatched quality and precision of Texas Instruments with the LM2902KNSE4 operational amplifier. With a wide range of applications in various industries, this high-performance component offers exceptional value and reliability to customers. Whether you need superior signal processing or precise voltage amplification, the LM2902KNSE4 delivers unparalleled performance, making it the ideal choice for your next project. Trust in Texas Instruments to provide top-of-the-line solutions for all your operational amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components, ensuring durability and reliability.

Maximum Input Offset Voltage: 10000 uV

Low input offset voltage allows for accurate signal processing and minimizes errors in the output signal.

Maximum Average Bias Current (IIB): -0.5 uA

Low bias current ensures minimal power consumption and reduces signal distortion.

No. of Functions: 4

Having multiple functions in one component saves space on the PCB and simplifies circuit design.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio helps in rejecting noise and interference from the input signal, resulting in a cleaner output.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard supply voltage, making it compatible with a wide range of applications.

Maximum Seated Height: 2 mm

Low profile design allows for compact and space-saving integration in electronic devices.

Nominal Unity Gain Bandwidth: 1200 kHz

High unity gain bandwidth ensures stable and accurate operation over a wide frequency range.

Technology: BIPOLAR

Bipolar technology offers good linearity, low noise, and high speed performance for precision applications.

Technical Specifications

Operational Amplifiers (Op Amps) LM2902KNSE4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Total Functions:

4

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

1.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

10000 uV

Nominal Slew Rate:

0.5 V/us

Peak Bias Current:

-500 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

26 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.402 in (10.2 mm)

Width:

0.209 in (5.3 mm)

Maximum Seated Height:

0.079 in (2 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Trade Compliance

LM2902KNSE4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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