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LM2902KDBR

Texas Instruments

LM2902KDBR by Texas Instruments

LM2902KDBR by Texas Instruments is a quad operational amplifier with 4 functions, featuring a max input offset voltage of 10000 uV and nominal voltage of 5 V. With a small outline package style, it is ideal for automotive applications requiring micropower amplification at temperatures ranging from -40 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,023 parts In-Stock

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4,023

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Vyrian

USA . 3,461 parts In-Stock

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One Stop Electronics

USA . 1,104 parts In-Stock

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$2.410

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1,104

$2.410

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Parana Technologies

USA . 902 parts In-Stock

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$4.588

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$5.048

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902

$4.588

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$5.048

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DigiPath Technology Company

USA . 597 parts In-Stock

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$5.052

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597

$5.052

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ChromeModa Solutions

Germany . 6,143 parts In-Stock

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$5.155

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$4.227

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6,143

$5.155

$4.227

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IDEA Electronic Components Group

UK . 1,196 parts In-Stock

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$5.155

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$4.640

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$5.155

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$4.640

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AZTECH Wire

Italy . 552 parts In-Stock

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$6.031

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552

$6.031

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Component Stockers USA

USA . 528 parts In-Stock

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$99.990

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528

$99.990

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Corphita

USA . 621 parts In-Stock

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Microchip USA

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Overview

Discover the LM2902KDBR by Texas Instruments, a high-quality operational amplifier perfect for a wide range of applications. With Texas Instruments' reputation for excellence in manufacturing, this product offers customers exceptional value and performance. Whether you're looking for precise signal processing or reliable voltage amplification, this amplifier's advanced features, such as micropower technology and frequency compensation, ensure optimal results every time. Upgrade your projects with the LM2902KDBR and experience the benefits of top-tier engineering at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the operational amplifier, making it suitable for various environments.

Maximum Input Offset Voltage: 10000 uV

Low input offset voltage ensures accuracy in signal amplification and processing, making this operational amplifier a reliable choice for precise applications.

Maximum Average Bias Current (IIB): -0.5 uA

Low bias current helps in reducing power consumption and improving operational efficiency of the amplifier.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during the manufacturing process.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio ensures effective rejection of common-mode signals, leading to cleaner and more accurate output signals.

Nominal Supply Voltage / Vsup (V): 5

Stable nominal supply voltage of 5V ensures consistent performance and compatibility with a wide range of electronic devices.

Frequency Compensation: YES

Frequency compensation feature helps in maintaining stability and improving the overall performance of the operational amplifier in various operating conditions.

Nominal Unity Gain Bandwidth: 1200 kHz

High unity gain bandwidth allows for efficient amplification and processing of signals with high frequencies.

Technical Specifications

Operational Amplifiers (Op Amps) LM2902KDBR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±13/3/26 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

1.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

10000 uV

Minimum Voltage Gain:

15000

Nominal Slew Rate:

0.5 V/us

Peak Bias Current:

-500 nA

Maximum Bias Current (IIB) @25 °C:

250 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

26 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

3 mA

Physical Characteristics

Length:

0.244 in (6.2 mm)

Width:

0.209 in (5.3 mm)

Maximum Seated Height:

0.079 in (2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Shrink Pitch

Package Equivalence Code:

SSOP14,.3

Trade Compliance

LM2902KDBR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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