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LM224KADG4

Texas Instruments

LM224KADG4 by Texas Instruments

LM224KADG4 by Texas Instruments is a micropower operational amplifier with low-bias current. It features a max input offset voltage of 7000 uV and nominal unity gain bandwidth of 1200 kHz. This op amp is ideal for applications requiring high voltage gain and low power consumption in small outline packages.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,115 parts In-Stock

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Digiode

USA . 3,751 parts In-Stock

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One Stop Electronics

USA . 1,096 parts In-Stock

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$0.410

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$0.410

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Parana Technologies

USA . 1,096 parts In-Stock

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$5.593

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$6.384

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$5.593

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DigiPath Technology Company

USA . 1,957 parts In-Stock

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$6.158

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ChromeModa Solutions

Germany . 4,666 parts In-Stock

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$6.284

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$5.153

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IDEA Electronic Components Group

UK . 571 parts In-Stock

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$6.284

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$5.656

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571

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AZTECH Wire

Italy . 760 parts In-Stock

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$15.936

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Corphita

USA . 1,805 parts In-Stock

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Authorized Procurement Solutions

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Overview

Elevate your electronic designs with the LM224KADG4 from Texas Instruments, a leading manufacturer known for its top-quality operational amplifiers. This versatile component offers exceptional performance in a wide range of applications, providing customers with reliable and efficient circuit solutions. With features like low-bias operation, micropower design, and high voltage limits, this amplifier delivers unparalleled value and benefits for your projects. Trust Texas Instruments to deliver the innovation and precision you need for success in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness for the product.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage helps in maintaining accuracy in signal processing.

Maximum Average Bias Current (IIB): -0.3 uA

Low bias current ensures minimal interference in the circuitry.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving on PCBs.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio helps in reducing noise and interference in the signals.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage ensures compatibility with common power sources.

No. of Terminals: 14

Sufficient number of terminals for connecting multiple components in the circuit.

Frequency Compensation: YES

Frequency compensation feature helps in stabilizing the amplifier's performance over a range of frequencies.

Technology: BIPOLAR

Bipolar technology offers good linearity and low noise for accurate signal processing.

Nominal Unity Gain Bandwidth: 1200 kHz

High unity gain bandwidth allows for high-speed signal amplification.

Technical Specifications

Operational Amplifiers (Op Amps) LM224KADG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±16/3/32 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

25000

Nominal Slew Rate:

0.5 V/us

Maximum Input Offset Current (IIO):

100 nA

Peak Bias Current:

-300 nA

Maximum Bias Current (IIB) @25 °C:

80 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

32 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

3 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

LM224KADG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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