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LM124D883B

Texas Instruments

LM124D883B by Texas Instruments

LM124D883B by Texas Instruments is a MIL-STD-883 Class B operational amplifier with 4 functions, 80 dB CMRR, and 1200 kHz unity gain bandwidth. Ideal for military applications due to its rugged design, it operates b/w -55 to 125 °C with a supply voltage of 5V and max input offset voltage of 0 uV.

Median Price

$13.790

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 3 parts In-Stock

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$13.790

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Vyrian

USA . 5,021 parts In-Stock

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Digiode

USA . 4,741 parts In-Stock

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Nova Conductors

Japan . 83 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 20 parts In-Stock

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Eagle Technology Solutions

USA . 8 parts In-Stock

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LWI Electronics Inc

India . 2 parts In-Stock

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Resion

USA . 2 parts In-Stock

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North Shore Components

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New Tech Sourcing

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Electronics Depot

USA . 1 parts In-Stock

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Classic Components Corporation

USA . 1 parts In-Stock

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One Stop Electronics

USA . 1,264 parts In-Stock

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$6.410

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$6.410

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Semicontronic

India . 1,116 parts In-Stock

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$6.410

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$6.250

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$6.218

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Parana Technologies

USA . 1,762 parts In-Stock

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$6.472

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$7.215

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DigiPath Technology Company

USA . 1,596 parts In-Stock

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$7.127

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ChromeModa Solutions

Germany . 4,873 parts In-Stock

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$7.272

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$5.963

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IDEA Electronic Components Group

UK . 622 parts In-Stock

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$7.272

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$6.545

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AZTECH Wire

Italy . 1,379 parts In-Stock

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$8.777

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Corphita

USA . 5,438 parts In-Stock

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Aranea Global

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Supply Digital

USA . 1,718 parts In-Stock

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Overview

Elevate your projects with the LM124D883B by Texas Instruments, a top-tier operational amplifier designed to deliver unmatched precision and reliability. Crafted with advanced technology and superior quality materials, this product from Texas Instruments stands out in the industry for its exceptional performance and durability. Ideal for a wide range of applications, this op amp boasts a 4-function design and MIL-STD-883 Class B screening level, ensuring optimal functionality in challenging environments. Experience seamless operation and enhanced efficiency with the LM124D883B, setting new standards in operational amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, ensuring a longer lifespan.

Maximum Input Offset Voltage: 0 uV

Very low input offset voltage results in accurate and precise amplification of signals.

Surface Mount: YES

Easily mountable on circuit boards, making it convenient for integration into electronic devices.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio minimizes noise interference for cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, compatible with many electronic systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for a wide range of environments.

Nominal Unity Gain Bandwidth: 1200 kHz

High bandwidth allows for fast and efficient signal processing.

Technology: BIPOLAR

Bipolar technology offers low noise and high precision in signal amplification.

Technical Specifications

Operational Amplifiers (Op Amps) LM124D883B attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Total Functions:

4

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

1.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

0 uV

Nominal Slew Rate:

0.06 V/us

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

32 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

MIL-STD-883 Class B

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Trade Compliance

LM124D883B Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5962-01-124-5386, 5962011245386, 5962-01-130-1692, 5962011301692

NIIN

011245386, 011301692

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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