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LM111JGB

Texas Instruments

LM111JGB by Texas Instruments

LM111JGB by Texas Instruments is a ceramic, glass-sealed comparator with 4000uV max input offset voltage and 0.15uA max average bias current. Ideal for military applications, it operates b/w -55 to 125 °C with open-collector output type and response time of 115ns.

Median Price

$19.931

Lifecycle Status

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Texas Instruments

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Avnet

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Nova Conductors

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Digiode

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Vyrian

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Speed Components Ltd

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ComSIT Distribution GmbH

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PC Components Company LLC

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Bristol Electronics

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Odintec Ltd.

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LWI Electronics Inc

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Parana Technologies

USA . 2,211 parts In-Stock

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DigiPath Technology Company

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ChromeModa Solutions

Germany . 1,889 parts In-Stock

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IDEA Electronic Components Group

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Ampacity Inc.

Singapore . 14,555 parts In-Stock

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Corphita

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AZTECH Wire

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Component Stockers USA

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Overview

Experience unmatched quality and reliability with the LM111JGB by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch products like the LM111JGB Comparator, ideal for applications requiring precision and efficiency. With its advanced technology and military-grade build, this product ensures optimal performance and durability. Say goodbye to compromise and hello to excellence with the LM111JGB - the perfect solution for your electronic needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This package material provides excellent protection for the internal components, ensuring durability and reliability in various operating conditions.

Maximum Input Offset Voltage: 4000 uV

The low input offset voltage helps in minimizing errors in the comparison process, making this comparator highly accurate.

Maximum Average Bias Current (IIB): 0.15 uA

With low bias current, the comparator consumes minimal power, making it energy-efficient and suitable for battery-operated applications.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V ensures stable and consistent performance of the comparator.

Maximum Operating Temperature: 125 °C

The wide operating temperature range allows this comparator to be used in various environments without compromising performance.

Output Type: OPEN-COLLECTOR; OPEN-DRAIN

The open-collector and open-drain outputs offer flexibility in interfacing with different logic levels or external circuitry.

Technology: BIPOLAR

Bipolar technology provides high-speed operation and precise signal processing, making this comparator ideal for time-critical applications.

Technical Specifications

Comparators LM111JGB attributes and parameters. Explore more Comparators devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Comparators

Output Type:

Open-Collector, Open-Drain

Performance Specifications

Maximum Input Offset Voltage:

4 mV

Peak Bias Current:

150 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Maximum Supply Current:

6 mA

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Nominal Response Time:

115 ns

Physical Characteristics

Length:

0.377 in (9.58 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

38535Q/M;38534H;883B

Standards

JESD-30 Code:

R-GDIP-T8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Type:

In-Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

LM111JGB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-446-8909, 5962014468909

NIIN

014468909

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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