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LF442ACN/NOPB

Texas Instruments

LF442ACN/NOPB by Texas Instruments

LF442ACN/NOPB by Texas Instruments is a dual operational amplifier with low bias current (0.00005 uA) and high common mode rejection ratio (100 dB). It operates on +-15V supplies, has a unity gain bandwidth of 1 MHz, and is ideal for precision signal processing applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 9,135 parts In-Stock

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Anansix

USA . 2,021 parts In-Stock

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Digiode

USA . 1,164 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Chip Stock

USA . 125 parts In-Stock

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Semi Source

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One Stop Electronics

USA . 758 parts In-Stock

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$2.410

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Corohmni

South Africa . 953 parts In-Stock

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$3.626

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Ampacity Inc.

Singapore . 233 parts In-Stock

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$4.410

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Parana Technologies

USA . 1,852 parts In-Stock

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$6.242

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$7.001

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ChromeModa Solutions

Germany . 1,580 parts In-Stock

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$7.013

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$5.751

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IDEA Electronic Components Group

UK . 292 parts In-Stock

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AZTECH Wire

Italy . 499 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Corphita

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Continental Prestige Electronics

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A-Z Elektronik GmbH

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DigiPath Technology Company

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Perfect Parts

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Argo Parts USA

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Aranea Global

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Overview

Unlock the power of precision with the LF442ACN/NOPB by Texas Instruments. As a leader in operational amplifiers, Texas Instruments delivers unparalleled quality and reliability in every product. Ideal for a wide range of applications, this operational amplifier offers exceptional performance and versatility. With low bias current, micropower capabilities, and a nominal unity gain bandwidth of 1000 kHz, customers can trust in the value and benefits that the LF442ACN/NOPB provides. Experience superior functionality and efficiency with Texas Instruments' LF442ACN/NOPB today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the operational amplifier.

Maximum Input Offset Voltage: 1000 uV

Low input offset voltage allows for accurate measurement and control in various applications.

Nominal Common Mode Reject Ratio: 100 dB

High common mode rejection ratio helps in rejecting noise and interference, resulting in cleaner signal output.

Nominal Supply Voltage / Vsup (V): 20

Suitable voltage supply for a wide range of applications, providing flexibility in design and operation.

Minimum Slew Rate: 0.8 V/us

Fast slew rate enables the operational amplifier to respond quickly to input changes, making it suitable for dynamic systems.

Technology: BIPOLAR

Bipolar technology offers good linearity and low noise performance, making this operational amplifier suitable for high precision applications.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations, enhancing the reliability of the operational amplifier in various operating conditions.

Amplifier Type: OPERATIONAL AMPLIFIER

Being a dedicated operational amplifier, this product is optimized for amplification applications, providing high performance and accuracy.

Technical Specifications

Operational Amplifiers (Op Amps) LF442ACN/NOPB attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

1000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.8 V/us

Nominal Slew Rate:

1 V/us

Peak Bias Current:

50 pA

Maximum Bias Current (IIB) @25 °C:

50 pA

Operational Characteristics

Nominal Supply Voltage:

20 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-20 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Maximum Supply Current:

400 μA

Physical Characteristics

Length:

0.387 in (9.8171 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

LF442ACN/NOPB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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