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ISO107B

Texas Instruments

ISO107B by Texas Instruments

ISO107B by Texas Instruments is an isolation amplifier with 16 terminals, 20 MHz bandwidth, and 2500 V isolation voltage. It has a rectangular package shape made of ceramic and metal-sealed cofired material. Ideal for applications requiring high voltage isolation in industrial settings.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,508 parts In-Stock

1+ parts

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1k+ parts

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9,508

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Digiode

USA . 1,502 parts In-Stock

1+ parts

-

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1,502

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 2,526 parts In-Stock

1+ parts

$4.410

100+ parts

-

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2,526

$4.410

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-

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Parana Technologies

USA . 505 parts In-Stock

1+ parts

$5.206

100+ parts

-

1k+ parts

$5.818

10k+ parts

-

505

$5.206

-

$5.818

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AZTECH Wire

Italy . 581 parts In-Stock

1+ parts

$5.301

100+ parts

-

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581

$5.301

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ChromeModa Solutions

Germany . 3,414 parts In-Stock

1+ parts

$5.850

100+ parts

$4.797

1k+ parts

-

10k+ parts

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3,414

$5.850

$4.797

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IDEA Electronic Components Group

UK . 783 parts In-Stock

1+ parts

$5.850

100+ parts

-

1k+ parts

$5.265

10k+ parts

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783

$5.850

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$5.265

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Corphita

USA . 2,080 parts In-Stock

1+ parts

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2,080

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DigiPath Technology Company

USA . 1,777 parts In-Stock

1+ parts

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100+ parts

$5.274

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1,777

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$5.274

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Overview

Experience unmatched quality and reliability with the Texas Instruments ISO107B Isolation Amplifier. Crafted with precision using ceramic and metal-sealed cofired materials, this rectangular package amplifier offers a nominal bandwidth of 20 MHz and a minimum isolation voltage of 2500 V. Perfect for applications requiring high levels of signal isolation and accuracy, the ISO107B ensures optimal performance in a wide range of industries. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations, providing you with the value and benefits you need for your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material provides durability and reliability, making this isolation amplifier suitable for harsh environments.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V ensures compatibility with various power sources and applications.

Nominal Bandwidth (3dB): 20 MHz

With a high nominal bandwidth of 20 MHz, this isolation amplifier can accurately handle high-frequency signals.

Minimum Isolation Voltage: 2500 V

The minimum isolation voltage of 2500V ensures safe and effective isolation of signals, making it suitable for critical applications where signal integrity is essential.

Technical Specifications

Isolation Amplifiers ISO107B attributes and parameters. Explore more Isolation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Performance Specifications

Nominal Bandwidth (3dB):

20 MHz

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Minimum Isolation Voltage:

2.5 KV

Physical Characteristics

Length:

1.61 in (40.895 mm)

Width:

0.9 in (22.86 mm)

Maximum Seated Height:

0.37 in (9.4 mm)

Total Terminals:

16

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-CDIP-T16

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Trade Compliance

ISO107B Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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